FABRICATION OF A HIGH FILL RATIO SILICON SPATIAL LIGHT MODULATOR
First Claim
1. A method for forming an optical deflection device, the method comprising:
- providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate, the upper surface region including one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region;
forming a planarizing material using the fill material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer; and
forming a thickness of silicon material at a temperature of less than 300°
C. to maintain a state of the planarizing material.
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Abstract
A method for forming an optical deflection device includes providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate. The upper surface region includes one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region. The method also includes forming a planarizing material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer using the fill material. The method further includes forming a thickness of silicon material at a temperature of less than 300° C. to maintain a state of the planarizing material.
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Citations
23 Claims
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1. A method for forming an optical deflection device, the method comprising:
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providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate, the upper surface region including one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region; forming a planarizing material using the fill material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer; and forming a thickness of silicon material at a temperature of less than 300°
C. to maintain a state of the planarizing material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for forming a planarized layer, the method comprising:
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providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate, the upper surface region including one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region; dispensing a fill material having a fluid characteristic overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer using the fill material. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification