METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED BIT LINES
First Claim
Patent Images
1. A method for fabricating a semiconductor device, comprising:
- etching a substrate to form trenches that separate active regions;
forming an insulation layer having an opening to open a portion of a sidewall of each active region;
forming a silicon layer pattern to gap-fill a portion of each trench and cover the opening in the insulation layer;
forming a metal layer over the silicon layer pattern; and
forming a metal silicide layer as buried bit lines, wherein the metal silicide layer is formed when the metal layer reacts with the silicon layer pattern.
2 Assignments
0 Petitions
Accused Products
Abstract
A method for fabricating a semiconductor device includes etching a substrate to form trenches that separate active regions, forming an insulation layer having an opening to open a portion of a sidewall of each active region, forming a silicon layer pattern to gap-fill a portion of each trench and cover the opening in the insulation layer, forming a metal layer over the silicon layer pattern, and forming a metal silicide layer as buried bit lines, where the metal silicide layer is formed when the metal layer reacts with the silicon layer pattern.
-
Citations
26 Claims
-
1. A method for fabricating a semiconductor device, comprising:
-
etching a substrate to form trenches that separate active regions; forming an insulation layer having an opening to open a portion of a sidewall of each active region; forming a silicon layer pattern to gap-fill a portion of each trench and cover the opening in the insulation layer; forming a metal layer over the silicon layer pattern; and forming a metal silicide layer as buried bit lines, wherein the metal silicide layer is formed when the metal layer reacts with the silicon layer pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A method for fabricating a semiconductor device, comprising:
-
etching a substrate to form trenches that separate active regions; forming an insulation layer having an opening to open a portion of a sidewall of each active region; forming a silicon layer over the insulation layer to gap-fill a portion of each trench and cover the opening in the insulation layer; forming spacers on portions of sidewalls of the insulation layer; etching the silicon layer by using the spacers as an etch barrier; forming a metal layer over the etched silicon layer; and forming a metal silicide layer as buried bit lines, wherein the metal silicide layer is formed when the metal layer reacts with the silicon layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
-
Specification