×

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED BIT LINES

  • US 20120171846A1
  • Filed: 06/06/2011
  • Published: 07/05/2012
  • Est. Priority Date: 12/30/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a semiconductor device, comprising:

  • etching a substrate to form trenches that separate active regions;

    forming an insulation layer having an opening to open a portion of a sidewall of each active region;

    forming a silicon layer pattern to gap-fill a portion of each trench and cover the opening in the insulation layer;

    forming a metal layer over the silicon layer pattern; and

    forming a metal silicide layer as buried bit lines, wherein the metal silicide layer is formed when the metal layer reacts with the silicon layer pattern.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×