CREATION OF VIAS AND TRENCHES WITH DIFFERENT DEPTHS
First Claim
1. A method comprising:
- depositing a plurality of dielectric layers on top of a semiconductor structure, said plurality of dielectric layers being separated by at least one etch-stop layer;
creating multiple openings from a top surface of said plurality of dielectric layers down into said plurality of dielectric layers by a non-selective etching process, wherein at least one of said multiple openings has a depth below said etch-step layer; and
continuing etching said multiple openings by a selective etching process until one or more openings of said multiple openings that are above said etch-stop layer reach and expose said etch-stop layer.
0 Assignments
0 Petitions
Accused Products
Abstract
Embodiments of the invention provide a method of creating vias and trenches with different length. The method includes depositing a plurality of dielectric layers on top of a semiconductor structure with the plurality of dielectric layers being separated by at least one etch-stop layer; creating multiple openings from a top surface of the plurality of dielectric layers down into the plurality of dielectric layers by a non-selective etching process, wherein at least one of the multiple openings has a depth below the etch-step layer; and continuing etching the multiple openings by a selective etching process until one or more openings of the multiple openings that are above the etch-stop layer reach and expose the etch-stop layer. Semiconductor structures made thereby are also provided.
-
Citations
16 Claims
-
1. A method comprising:
-
depositing a plurality of dielectric layers on top of a semiconductor structure, said plurality of dielectric layers being separated by at least one etch-stop layer; creating multiple openings from a top surface of said plurality of dielectric layers down into said plurality of dielectric layers by a non-selective etching process, wherein at least one of said multiple openings has a depth below said etch-step layer; and continuing etching said multiple openings by a selective etching process until one or more openings of said multiple openings that are above said etch-stop layer reach and expose said etch-stop layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
Specification