APPARATUS FOR AND A METHOD OF DETERMINING SURFACE CHARACTERISTICS

• US 20120176624A1
• Filed: 01/18/2012
• Published: 07/12/2012
• Est. Priority Date: 12/22/2005
• Status: Active Grant

• Current Assignee: Taylor Hobson Limited (Ametek Incorporated)
• Original Assignee: Taylor Hobson Limited (Ametek Incorporated)
• Inventors: Mansfield, Daniel Ian
• Granted Patent: US 8,543,353 B2
• Time in Patent Office: Days
• US Class Current: 356/511
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: G01B 11/303 using photoelectric detection means
• CPC Class Codes: G01B 9/02057 by using common path configuration, i.e. reference and object path almost entirely overlapping
• CPC Class Codes: G01B 9/02083 characterised by particular signal processing and presentation
• CPC Class Codes: G01B 9/02084 Processing in the Fourier or frequency domain when not imaged in the frequency domain
• CPC Class Codes: G01B 9/0209 Low-coherence interferometers

Abstract

Light reflected by a sample surface region and a reference surface interfere. A detector senses light intensity at intervals during relative movement along a scan path between the sample surface and the reference surface to provide a series of intensity values representing interference fringes. A data processor receives first intensity data comprising a first series of intensity values resulting from a measurement operation on a surface area of a substrate and second intensity data comprising a second series of intensity values resulting from a measurement operation on a surface area of a thin film structure. A gain is determined for each thin film of the thin film structure. Substrate and apparent thin film structure surface characteristics are determined on the basis of the first and second intensity data, respectively. The apparent thin film structure surface characteristic is modified using the substrate surface characteristic and the determined gain or gains.

Claims

1-60. -60. (canceled)

61. Apparatus for determining information relating to a surface characteristic of a sample in the form of a thin film structure comprising one or more thin film layers on a substrate, the apparatus comprising:

a light source;

a light director to direct light from the light source along a sample path towards a surface region of a said sample and along a reference path towards a reference surface such that light reflected by a sample surface region and light reflected by the reference surface interfere;

a mover to effect relative movement along a measurement path between the sample and the reference surface;

a sensing device operable to sense light representing the interference fringes produced by the sample surface region;

a controller operable to carry out a measurement operation by causing the sensing device to sense light intensity at a number of locations along the measurement path to provide, for each location, a corresponding intensity value; and

a data processor to receive first intensity data comprising a first series of the intensity values resulting from a measurement operation on a surface area of a substrate and second intensity data comprising at least a second series of the intensity values resulting from a measurement operation on a surface area of a thin film structure, the data processor comprising;

a surface characteristic determiner to determine a substrate surface characteristic on the basis of the first intensity data, to determine an apparent thin film structure surface characteristic on the basis of the second intensity data, and to;

(a) determine a frequency transform ratio corresponding to a ratio between the second intensity data comprising the second series of intensity values resulting from the measurement operation on the thin film layer structure surface area and the first intensity data comprising the first series of intensity values resulting from the measurement operation on the surface area of a substrate,

(b) determine a mean of said frequency transform ratios for a number of different surface regions of the thin film structure, and

(c) fit a layer structure model having variable model parameters related to the layer thicknesses of the layers of the thin film structure to data based on the values determined in steps (a) and (b).