GENERATING CUT MASK FOR DOUBLE-PATTERNING PROCESS

• US 20120180006A1
• Filed: 01/06/2011
• Published: 07/12/2012
• Est. Priority Date: 01/06/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG, International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Baum, Zachary, Haffner, Henning, Mansfield, Scott M.
• Granted Patent: US 8,365,108 B2
• Time in Patent Office: Days
• US Class Current: 716/52
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Abstract

Aspects of the invention include a computer-implemented method of designing a photomask. In one embodiment, the method comprises: simulating a first photomask patterning process using a first photomask design to create simulated contours; comparing the simulated contours to a desired design; identifying regions not common to the simulated contours and the desired design; creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.

Claims

1. A computer-implemented method of designing a photomask, the method comprising:

simulating a first photomask patterning process using a first photomask design to create simulated contours;

comparing the simulated contours to a desired design;

identifying regions not common to the simulated contours and the desired design;

creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and

providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.

2. The method of claim 1, wherein the desired target shapes for the second photomask patterning process are created to remove at least one of extraneous features and additional features in the identified region during the second photomask patterning process, wherein the extraneous features include features predicted to print due to at least one of optical interference and sub-resolution assist features (SRAFs).

3. The method of claim 1, wherein the simulating of the first photomask patterning process includes simulating using nominal processing conditions.

4. The method of claim 3, wherein the simulated contours are formed according to the nominal process conditions.

5. The method of claim 1, wherein the simulating of the first photomask patterning process includes simulating using process variation conditions.

6. The method of claim 5, wherein the simulated contours are formed according to the process variation conditions to form a process variation band.

7. The method of claim 6, wherein the process variation band represents a range of possible edge locations printable within the process variation conditions.

8. The method of claim 6, wherein the comparing of the simulated contours to the desired design includes comparing the process variation band to tolerance bands associated with the desired target shapes for the second photomask patterning process.

9. A computer system comprising:

at least one computing device configured to design a photomask by performing actions comprising;

simulating a first photomask patterning process using a first photomask design to create simulated contours;

comparing the simulated contours to a desired design;

identifying regions not common to the simulated contours and the desired design;

creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and

providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.

10. The system of claim 9, wherein the desired target shapes for the second photomask patterning process are created to remove at least one of extraneous features and additional features in the identified region during the second photomask patterning process, wherein the extraneous features include features predicted to print due to at least one of optical interference and sub-resolution assist features (SRAFs).

11. The system of claim 9, wherein the simulating of the first photomask patterning process includes simulating using nominal processing conditions.

12. The system of claim 11, wherein the simulated contours are formed according to the nominal process conditions.

13. The system of claim 9, wherein the simulating of the first photomask patterning process includes simulating using process variation conditions.

14. The system of claim 13, wherein the simulated contours are formed according to the process variation conditions to form a simulated process variation band.

15. The system of claim 14, wherein the process variation band represents a range of possible edge locations printable within the process variation conditions.

16. The system of claim 14, wherein the comparing of the simulated contours to the desired design includes comparing the process variation band to tolerance bands associated with the desired target shapes for the second photomask patterning process.

17. A computer program comprising program code embodied in at least one computer-readable storage medium, which when executed, enables a computer system to implement a method for designing a photomask, the method comprising:

simulating a first photomask patterning process using a first photomask design to create simulated contours;

comparing the simulated contours to a desired design;

identifying regions not common to the simulated contours and the desired design;

creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and

providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.

18. The computer program of claim 17, wherein the desired target shapes for the second photomask patterning process are created to remove at least one of extraneous features and additional features in the identified region during the second photomask patterning process, wherein the extraneous features include features predicted to print due to at least one of optical interference and sub-resolution assist features (SRAFs).

19. The computer program of claim 17, wherein the simulating of the first photomask patterning process includes simulating using nominal processing conditions.

20. The computer program of claim 19, wherein the simulated contours are formed according to the nominal process conditions.

21. The computer program of claim 17, wherein the simulating of the first photomask patterning process includes simulating using process variation conditions.

22. The computer program of claim 21, wherein the simulated contours are formed according to the process variation conditions to form a simulated process variation band.

23. The computer program of claim 22, wherein the process variation band represents a range of possible edge locations printable within the process variation conditions.

24. The computer program of claim 22, wherein the comparing of the simulated contours to the desired design includes comparing the process variation band to tolerance bands associated with the desired target shapes for the second photomask patterning process.

25. A computer system comprising:

at least one computing device configured to design a photomask by performing actions comprising;

simulating a first photomask patterning process using a first photomask design to create simulated contours, the first photomask design having target shapes including at least one of design features and additional features;

comparing the simulated contours to a desired design;

identifying regions not common to the simulated contours and the desired design;

creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions, wherein the desired target shapes for the second photomask patterning process are created to remove at least one of extraneous features and additional features in the identified region during the second photomask patterning process, wherein the extraneous features include features predicted to print due to at least one of optical interference and sub-resolution assist features (SRAFs); and

providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.