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METAL OXIDE SEMICONDUCTOR STRUCTURE AND PRODUCTION METHOD THEREOF

  • US 20120181532A1
  • Filed: 05/05/2011
  • Published: 07/19/2012
  • Est. Priority Date: 01/13/2011
  • Status: Active Grant
First Claim
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1. A metal oxide semiconductor structure, comprising:

  • a substrate;

    a gate electrode, being made of metal and deposited on said substrate, for coupling to a gate driving signal;

    a gate insulation layer, being an insulation layer deposited over said gate electrode and said substrate;

    an IGZO layer, being an In—

    Ga—

    Zn—

    O layer deposited on said gate insulation layer, for functioning as a channel;

    a source electrode, being made of metal and deposited at one side of said IGZO layer, for coupling to a source driving signal;

    a drain electrode, being made of metal and deposited at another side of said IGZO layer, for coupling to a pixel electrode;

    a first passivation layer, being a first silicon compound layer deposited over said source electrode, said IGZO layer, and said drain electrode;

    a second passivation layer, being a second silicon compound layer deposited over said first passivation layer; and

    a resin layer, being an opaque resin layer deposited over said source electrode, said second passivation layer, and said drain electrode.

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