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SEMICONDUCTOR LIGHT EMITTING DEVICE

  • US 20120181572A1
  • Filed: 03/27/2012
  • Published: 07/19/2012
  • Est. Priority Date: 04/17/2006
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a first electrode and a second electrode respectively provided on a first conductive type semiconductor layer and a second conductive type semiconductor layer on a same surface side,the first conductive type semiconductor layer having a different conductive type from the second conductive type semiconductor layer, andan insulating film disposed on the second electrode, and at least one opening in the insulating film exposing at least one region, said at least one region forming at least one external connecting part of the second electrode,wherein in the same surface side;

    the first electrode comprises at least two first electrodes which are not connected to each other in said surface side on the first conductive type semiconductor layer, and each of said at least two first electrodes comprisesa base part, andtwo extended parts extending from the base part along different segments, andan external connecting part of the second electrode is arranged such that a portion of said external connecting part is provided in between two extended parts of different first electrodes.

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