MAGNETIC TUNNEL JUNCTION COMPRISING A POLARIZING LAYER
First Claim
1. A method for manufacturing a magnetic tunnel junction to be written with a spin polarized current, the magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization;
- comprising;
depositing the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer;
annealing the deposited ferromagnetic layers at a first annealing temperature such as a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%;
depositing the polarizer layer; and
annealing the deposited polarizer layer at a second annealing temperature such as to orient the polarizing magnetization substantially perpendicular to the first and second magnetization, said annealing the deposited ferromagnetic layers at the first annealing temperature being performed prior to depositing the polarizer layer.
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Abstract
The present disclosure concerns memory device comprising magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization; the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%. Also disclosed is a method of forming the MRAM cell.
90 Citations
8 Claims
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1. A method for manufacturing a magnetic tunnel junction to be written with a spin polarized current, the magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization;
- comprising;
depositing the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer; annealing the deposited ferromagnetic layers at a first annealing temperature such as a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%; depositing the polarizer layer; and annealing the deposited polarizer layer at a second annealing temperature such as to orient the polarizing magnetization substantially perpendicular to the first and second magnetization, said annealing the deposited ferromagnetic layers at the first annealing temperature being performed prior to depositing the polarizer layer. - View Dependent Claims (2, 3, 4, 5, 6)
- comprising;
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7. A MRAM cell comprising a magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization;
- the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%.
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8. A magnetic memory device comprising a plurality of MRAM cells, each MRAM cell comprising a magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization;
- the first and second ferromagnetic layers being such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%.
Specification