SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
First Claim
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1. A semiconductor device comprising:
- a substrate;
an upper interconnection on the substrate; and
an anti-reflection pattern disposed on the upper interconnection, wherein the anti-reflection pattern comprises a compound including a metal, carbon and nitrogen.
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Abstract
A semiconductor device may include an upper interconnection on a substrate and an anti-reflection pattern disposed on the upper interconnection. The anti-reflection pattern may include a compound including a metal, carbon and nitrogen.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a substrate; an upper interconnection on the substrate; and an anti-reflection pattern disposed on the upper interconnection, wherein the anti-reflection pattern comprises a compound including a metal, carbon and nitrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13-17. -17. (canceled)
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18. A semiconductor device comprising:
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a substrate; a first layer on the substrate, the first layer including a mold dielectric film that defines a trench and a lower interconnection mounted in the trench, wherein the lower interconnection includes a first electrically conductive line and a first barrier pattern between the first electrically conductive line and both the mold dielectric film and the substrate; a second layer on the first layer on an opposite side of the first layer from the substrate, the second layer including (a) a capping film on the lower interconnection, (b) an interlayer dielectric film on the capping film, wherein the interlayer dielectric film defines a trench, and (c) a contact plug in the trench and on the lower interconnection, wherein the contact plug includes a contact conductive pattern and a contact barrier pattern between the contact conductive pattern and both the interlayer dielectric film and the lower interconnection; a third layer on the second layer on an opposite side of the second layer from the first layer, the third layer including an upper interconnection including a second electrically conductive line and a second barrier pattern between the second electrically conductive line and the second layer; and an anti-reflection pattern on the second electrically conductive line on an opposite side of the electrically conductive line from the second barrier pattern, wherein the anti-reflection pattern comprises a compound including a metal, carbon and nitrogen. - View Dependent Claims (19, 20)
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Specification