Self-Biasing Radio Frequency Circuitry
First Claim
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1. A method comprising:
- amplifying a radio frequency (RF) signal via a circuit having a first transistor configured to source current from a power source to an output of the circuit based on the RF signal and a second transistor configured to sink current from the output of the circuit to a current sink based on the RF signal; and
providing, without active circuitry, another signal from the output of the circuit to a gate of the first transistor effective to bias a voltage at the output of the circuit.
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Abstract
The present disclosure describes self-biasing radio frequency circuitry. In some aspects a radio frequency (RF) signal is amplified via a circuit having a first transistor configured to source current to an output of the circuit and a second transistor configured to sink current from the output of the circuit, and another signal is provided, without active circuitry, from the output of the circuit to a gate of the first transistor effective to bias a voltage at the output of the circuit. By so doing, the output of the circuit can be biased without active circuitry which can reduce design complexity of and substrate area consumed by the circuit.
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Citations
20 Claims
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1. A method comprising:
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amplifying a radio frequency (RF) signal via a circuit having a first transistor configured to source current from a power source to an output of the circuit based on the RF signal and a second transistor configured to sink current from the output of the circuit to a current sink based on the RF signal; and providing, without active circuitry, another signal from the output of the circuit to a gate of the first transistor effective to bias a voltage at the output of the circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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applying a radio frequency (RF) signal to respective gates of a first and a second metal-oxide-semiconductor field-effect transistor (MOSFET) that are operatively connected in series between a power source and a current sink by their respective drains; sourcing, based on the RF signal, current via the first MOSFET to an output formed at the drains of the first and the second MOSFETs effective to amplify the RF signal; sinking, based on the RF signal, current via the second MOSFET from the output formed at the drains of the first and the second MOSFETs effective to amplify the RF signal; and biasing a voltage at the output without active circuitry operably connected between a gate of the first MOSFET and the output formed at the drains of the first and the second MOSFETs. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A circuit comprising:
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two p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) operably connected in series and configured to source current from a current source to an output of the circuit; two n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) operably connected in series and configured to sink current from the output of the circuit to a current sink; and non-active biasing circuitry operably connected between the output of the circuit and a gate of one of the pMOSFETs effective to bias a voltage of the output of the circuit. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification