ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE

• US 20120182274A1
• Filed: 05/18/2010
• Published: 07/19/2012
• Est. Priority Date: 10/02/2009
• Status: Active Grant

• Current Assignee: Unified Innovative Technology, LLC
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Nakahara, Hijiri
• Granted Patent: US 9,551,910 B2
• Time in Patent Office: Days
• US Class Current: 345/204
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes

Abstract

An active matrix substrate 5 is provided with: a plurality of source wiring lines and a plurality of gate wiring lines, which are arranged in a matrix pattern; and picture elements, each of which has a thin film transistor provided in the vicinity of a part where each source wiring line and each gate wiring line intersect each other, and a picture element electrode 26 connected to the thin film transistor. In the active matrix substrate, a base member 5a is provided such that the source wiring lines and the gate wiring lines intersect each other, and on the base member 5a, the connecting portion 28a of an auxiliary capacitor electrode and the connecting portion 29a of an auxiliary capacitor wiring line are connected to each other by having therebetween a nitride film 33 composed of a high melting point metal material.

Claims

1. An active matrix substrate for use as a substrate of a display panel, comprising:

a plurality of data wiring lines and a plurality of scan wiring lines, which are arranged in a matrix pattern;

picture elements, each of which has a switching element provided in the vicinity of a part where said data wiring line and said scan wiring line intersect each other, and a picture element electrode connected to said switching element; and

a base member provided with said data wiring lines and said scan wiring lines intersecting one another,

wherein on said base member for each picture element are provided an auxiliary capacitor electrode comprising a transparent electrode for causing generation of an auxiliary capacitance, and an auxiliary capacitor wiring line comprising an aluminum alloy, and

wherein said auxiliary capacitor electrode and said auxiliary capacitor wiring line are connected to each other by a nitride film of a metal material interposed therebetween.

2. The active matrix substrate according to claim 1, wherein a high melting point metal material having a melting point greater than or equal to 1,000°

C. is used as said metal material.

3. The active matrix substrate according to claim 1, wherein said nitride film contains nitrogen at a concentration greater than or equal to 5 percent by weight and less than or equal to 90 percent by weight.

4. The active matrix substrate according to claim 1, wherein, at the location of connection between said auxiliary capacitor electrode and said auxiliary capacitor wiring line, said auxiliary capacitor wiring line is arranged above said auxiliary capacitor electrode, and said auxiliary capacitor wiring line is connected to said auxiliary capacitor electrode with said nitride film interposed therebetween.

5. The active matrix substrate according to claim 1, wherein a transparent electrically conductive film is used as said auxiliary capacitor electrode, and said auxiliary capacitor wiring line includes at least one of carbon, silicon, cobalt, nickel, germanium, rhodium, palladium, and tin as an additive.

6. The active matrix substrate according to claim 5, wherein the total content of the additive in said auxiliary capacitor wiring line is greater than or equal to 0.2 percent by weight and less than or equal to 5.0 percent by weight.

7. The active matrix substrate according to claim 1, wherein said scan wiring line is formed from the same material as said auxiliary capacitor wiring line.

8. A display device comprising a display part, wherein said active matrix substrate according to claim 1 is used in said display part.