Contact Arrangement For Establishing A Spaced, Electrically Conducting Connection Between Microstructured Components
First Claim
1. A contact arrangement for establishing a spaced, electrically conducting connection between a first wafer and a second wafer, the contact arrangement comprising:
- an electrical connection contact;
a passivation layer on the electrical connection contact; and
a dielectric spacer layer arranged on the passivation layer,wherein the contact arrangement is arranged at least on one of the first wafer and the second wafer,wherein the contact arrangement comprises trenches at least partly filled with a first material capable of forming a metal-metal connection,wherein the trenches are continuous trenches from the dielectric spacer layer through the passivation layer as far as the electrical connection contact, andwherein the first material is arranged in the trenches from the electrical connection contact as far as the upper edge of the trenches.
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Accused Products
Abstract
A contact arrangement for establishing a spaced, electrically conducting connection between a first wafer and a second wafer includes an electrical connection contact, a passivation layer on the electrical connection contact, and a dielectric spacer layer arranged on the passivation layer, wherein the contact arrangement is arranged at least on one of the first wafer and the second wafer, wherein the contact arrangement comprises trenches at least partly filled with a first material capable of forming a metal-metal connection, wherein the trenches are continuous trenches from the dielectric spacer layer through the passivation layer as far as the electrical connection contact, and wherein the first material is arranged in the trenches from the electrical connection contact as far as the upper edge of the trenches.
15 Citations
10 Claims
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1. A contact arrangement for establishing a spaced, electrically conducting connection between a first wafer and a second wafer, the contact arrangement comprising:
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an electrical connection contact; a passivation layer on the electrical connection contact; and a dielectric spacer layer arranged on the passivation layer, wherein the contact arrangement is arranged at least on one of the first wafer and the second wafer, wherein the contact arrangement comprises trenches at least partly filled with a first material capable of forming a metal-metal connection, wherein the trenches are continuous trenches from the dielectric spacer layer through the passivation layer as far as the electrical connection contact, and wherein the first material is arranged in the trenches from the electrical connection contact as far as the upper edge of the trenches. - View Dependent Claims (2, 3, 4)
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5. A component arrangement, comprising:
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a first wafer; and a second wafer connected to the first wafer, wherein the first wafer comprises a first microstructured component and the second wafer comprises a second microstructured component, wherein the first wafer comprises a first contact arrangement including (i) a first electrical connection contact, (ii) a first passivation layer on the first electrical connection contact, and (iii) a first dielectric spacer layer arranged on the first passivation layer, wherein the first contact arrangement comprises first trenches at least partly filled with a first material capable of forming a metal-metal connection, wherein the first trenches are continuous trenches from the first dielectric spacer layer through the first passivation layer as far as the first electrical connection contact, wherein the first material is arranged in the first trenches from the first electrical connection contact as far as the upper edge of the first trenches, wherein the second wafer comprises a first mating contact connected to the first contact arrangement and comprising a second material capable of the metal-metal connection, and wherein the first and the second material capable of the metal-metal connection furthermore form a connection together with one another. - View Dependent Claims (6, 7, 8, 9)
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10. A method for producing a contact arrangement, comprising:
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providing a connection contact on a wafer; applying a passivation layer on the connection contact; structuring a dielectric spacer layer deposited on the passivation layer, wherein trenches are formed; and depositing a first material capable of forming a metal-metal connection at least partly into the trenches, wherein the trenches are structured as continuous trenches from the dielectric spacer layer as far as the connection contact, and wherein the first material is deposited in the trenches from the connection contact as far as the upper edge of the trenches.
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Specification