INTERCONNECTION STRUCTURE, APPARATUS THEREWITH, CIRCUIT STRUCTURE THEREWITH

• US 20120187550A1
• Filed: 05/17/2011
• Published: 07/26/2012
• Est. Priority Date: 01/24/2011
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Wu, Shih-Hsien
• Granted Patent: US 8,853,848 B2
• Time in Patent Office: Days
• US Class Current: 257/659
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/147 Semiconductor insulating substrates semiconductor conductive substrates H01L23/4926
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 1/0222 for shielding around a single via or around a group of vias, e.g. coaxial vias or vias surrounded by a grounded via fence
• CPC Class Codes: H05K 2201/096 Vertically aligned vias, holes or stacked vias

Abstract

An interconnection structure is disposed between a first conductive layer and a second conductive layer substantially parallel to each other. The conductive layer includes a signal trace. The interconnection structure includes a conductor pillar and a shielding wall pillar. The conductor pillar goes through between the two conductive layers and is electrically connected to the signal trace of the first conductive layer. The shielding wall pillar is also disposed between the two conductive layers and located at a portion of an external region surrounding the conductor pillar and electrically coupled to the conductor pillar. The conductor pillar and the shielding wall pillar are disposed in pair or in group. The shielding wall pillar with a shape different from that of the conductor pillar would make the conductor pillar serve as a connection with a designed impedance and the capability of controlling impedance based on the special shape design thereof.

Claims

1. An interconnection structure, disposed between a first conductive layer and a second conductive layer, wherein the first conductive layer and the second conductive layer are substantially parallel to each other and the first conductive layer and the second conductive layer respectively comprise a first signal trace and a second signal trace;

the interconnection structure comprising;

a conductor pillar, going through between the first conductive layer and the second conductive layer and electrically connected to the first signal trace and the second signal trace; and

a shielding wall pillar, disposed between the first conductive layer and the second conductive layer and electrically connected to a reference conductive wire, wherein the shielding wall pillar is disposed at a portion of an external region surrounding the conductor pillar between the first conductive layer and the second conductive layer and electrically coupled to the conductor pillar.

2. The interconnection structure as claimed in claim 1, wherein the cross-sectional shape of the conductor pillar going through between the first conductive layer and the second conductive layer is a first geometric shape and the cross-sectional shape of the shielding wall pillar going through between the first conductive layer and the second conductive layer is a second geometric shape, wherein the first geometric shape is different from the second geometric shape.

3. The interconnection structure as claimed in claim 2, wherein the cross-sectional shape of the conductor pillar going through between the first conductive layer and the second conductive layer is circle shape.

4. The interconnection structure as claimed in claim 2, wherein the first geometric shape is circle shape, the second geometric shape is semi-moon shape and the concave edge of the semi-moon shape faces or backs to the conductor pillar.

5. The interconnection structure as claimed in claim 2, wherein the shielding wall pillar has at least a first area facing the conductor pillar, wherein the first area is greater than a second area formed by projecting of the conductor pillar onto the shielding wall pillar, wherein the first area is substantially capable of shielding off the electrical field of the other region except for the electrical field on the second area in the direction for the conductor pillar to face the shielding wall pillar.

6. The interconnection structure as claimed in claim 1, wherein the reference conductive wire is located at one of the ground layer and the power layer, and the ground layer or the power layer is substantially parallel to both of or one of the first conductive layer and the second conductive layer.

7. The interconnection structure as claimed in claim 1, wherein the reference conductive wire is located at the second conductive layer and electrically isolated from the second signal trace but electrically connected to the ground layer or the power layer.

8. The interconnection structure as claimed in claim 1, wherein the interconnection structure comprises a plurality of the shielding wall pillars, wherein the shielding wall pillars surround the conductor pillar.

9. An apparatus, comprising a medium plate and the interconnection structure as claimed in claim 1, wherein the interconnection structure is disposed at the medium plate.

10. The apparatus as claimed in claim 9, wherein the medium plate comprises one of silicon, glass, printed circuit board and ceramic substrate.

11. An apparatus, comprising a silicon plate and the interconnection structure as claimed in claim 1, wherein the silicon plate comprises:

a first insulation layer, a second insulation layer, a first plane and a second plane of the silicon plate, wherein the first plane and the second plane are substantially parallel to each other, wherein the first conductive layer is disposed at a side of the first insulation layer, the opposite other side faces into the silicon plate, the first conductive layer is disposed on the first insulation layer, wherein the second conductive layer is disposed at a side of the second insulation layer, the opposite other side faces into the silicon plate and the second conductive layer is disposed on the second insulation layer;

a first through hole and a second through hole, wherein the conductor pillar is disposed in the first through hole and the shielding wall pillar is disposed in the second through hole;

a first insulation medium, located between the side wall of the first through hole and the conductor pillar; and

a second insulation medium, located between the side wall of the second through hole and the shielding wall pillar, wherein

the cross-sectional shapes of the first through hole and the second through hole going through between the silicon plate are respectively a first geometric shape and a second geometric shape, wherein the first geometric shape is different from the second geometric shape.

12. The apparatus as claimed in claim 11, wherein the first geometric shape is circle shape.

13. The apparatus as claimed in claim 11, wherein the first geometric shape is circle shape, the second geometric shape is semi-moon shape and the concave edge of the semi-moon shape faces or backs to the conductor pillar.

14. An interconnection structure, disposed between a first conductive layer and a second conductive layer both substantially parallel to each other, wherein the first conductive layer comprises a signal trace;

the interconnection structure comprising;

a conductor pillar, going through between the first conductive layer and the second conductive layer and electrically connected to the signal trace of the first conductive layer; and

a shielding wall pillar, disposed between the first conductive layer and the second conductive layer, disposed at a portion of an external region surrounding the conductor pillar and electrically coupled to the conductor pillar.

15. The interconnection structure as claimed in claim 14, wherein the cross-sectional shape of the conductor pillar going through between the first conductive layer and the second conductive layer is a first geometric shape and the cross-sectional shape of the shielding wall pillar going through between the first conductive layer, the second conductive layer and the reference conductive layer is a second geometric shape, wherein the first geometric shape is different from the second geometric shape.

16. The interconnection structure as claimed in claim 15, wherein the cross-sectional shape of the conductor pillar going through between the first conductive layer, the second conductive layer and a reference conductive layer is circle shape.

17. The interconnection structure as claimed in claim 15, wherein the first geometric shape is circle shape, the second geometric shape is semi-moon shape, wherein the concave edge of the semi-moon shape faces frontward or backward to the conductor pillar.

18. The interconnection structure as claimed in claim 14, wherein the interconnection structure comprises a plurality of shielding wall pillars, wherein the shielding wall pillars surround the conductor pillar.

19. A circuit structure, comprising:

a first conductive layer, comprising a first signal trace;

a second conductive layer, comprising a second signal trace, wherein the second conductive layer is substantially parallel to the first conductive layer;

a reference conductive wire, located between the first conductive layer and the second conductive layer;

a conductor pillar, going through between the first conductive layer and the second conductive layer, the conductor pillar being electrically connected to the first signal trace and the second signal trace of the first conductive layer and being electrically isolated from the reference conductive wire; and

a shielding wall pillar, disposed between the first conductive layer and the second conductive layer, the shielding wall pillar being electrically connected to the reference conductive wire, wherein the shielding wall pillar is disposed at a portion of an external region surrounding the conductor pillar and electrically coupled to the conductor pillar.

20. The circuit structure as claimed in claim 19, wherein the cross-sectional shape of the conductor pillar going through between the first conductive layer and the second conductive layer is a first geometric shape and the cross-sectional shape of the shielding wall pillar going through between the first conductive layer and the second conductive layer is a second geometric shape, wherein the first geometric shape is different from the second geometric shape.

21. The circuit structure as claimed in claim 20, wherein the cross-sectional shape of the conductor pillar going through between the first conductive layer and the second conductive layer is circle shape.

22. The circuit structure as claimed in claim 20, wherein the first geometric shape is circle shape, the second geometric shape is semi-moon shape, wherein the concave edge of the semi-moon shape being disposed faces frontward or backward to the conductor pillar.

23. The circuit structure as claimed in claim 19, wherein the reference conductive wire is located at a ground layer or a power layer, and the ground layer or the power layer is disposed between the first conductive layer and the second conductive layer.

24. The circuit structure as claimed in claim 19, wherein the reference conductive wire is located at the second conductive layer, wherein the reference conductive wire is electrically isolated from the second signal trace but electrically connected to one of a ground level and a power level.

25. The circuit structure as claimed in claim 19, wherein the interconnection structure comprises a plurality of the shielding wall pillars, wherein the shielding wall pillars surround the conductor pillar.

26. An interconnection structure, disposed between a first conductive layer, a second conductive layer and a third conductive layer, wherein the first conductive layer and the third conductive layer are substantially parallel to each other, and the first conductive layer and the third conductive layer respectively comprise a first signal trace and a second signal trace;

the interconnection structure comprising;

a conductor pillar, going through between the first conductive layer, the second conductive layer and the third conductive layer, and the conductor pillar is electrically connected to the first signal trace and the second signal trace; and

a first shielding wall pillar, disposed between the first conductive layer and the second conductive layer and electrically connected to the second conductive layer, wherein the first shielding wall pillar is located at a portion of an external region surrounding the conductor pillar between the first conductive layer and the second conductive layer and electrically coupled to the conductor pillar; and

a second shielding wall pillar, disposed between the second conductive layer and the third conductive layer and electrically connected to the second conductive layer, wherein the second shielding wall pillar is located at a portion of an external region surrounding the conductor pillar between the second conductive layer and the third conductive layer and electrically coupled to the conductor pillar.

27. The interconnection structure as claimed in claim 26, wherein the cross-sectional shape of the conductor pillar going through between the first conductive layer, the second conductive layer and the third conductive layer is a first geometric shape, the cross-sectional shape of the first shielding wall pillar going through between the first conductive layer and the second conductive layer is a second geometric shape, and the cross-sectional shape of the second shielding wall pillar going through between the second conductive layer and the third conductive layer is a third geometric shape, wherein the first geometric shape is different from the second geometric shape and the third geometric shape.

28. The interconnection structure as claimed in claim 27, wherein the first geometric shape is circle shape, and the second geometric shape and the third geometric shape are semi-moon shape, wherein the concave edge of the semi-moon shape faces frontward or backward to the conductor pillar.

29. An interconnection structure, disposed between a first conductive layer, a second conductive layer, a third conductive layer and a fourth conductive layer, wherein the first conductive layer and the fourth conductive layer are substantially parallel to each other, and the first conductive layer and the fourth conductive layer respectively comprise a first signal trace and a second signal trace;

the interconnection structure comprising;

a conductor pillar, going through between the first conductive layer, the second conductive layer, the third conductive layer and the fourth conductive layer, wherein the conductor pillar is electrically connected to the first signal trace and the second signal trace but electrically isolated from the second conductive layer and the third conductive layer; and

a first shielding wall pillar, disposed between the first conductive layer and the second conductive layer, the first shielding wall pillar being electrically connected to the second conductive layer and located at a portion of an external region surrounding the conductor pillar between the first conductive layer and the second conductive layer, the first shielding wall pillar being electrically coupled to the conductor pillar; and

a second shielding wall pillar, disposed between the second conductive layer and the third conductive layer, the second shielding wall pillar being electrically connected to one of the second conductive layer and the third conductive layer, and located at a portion of an external region surrounding the conductor pillar between the second conductive layer and the third conductive layer, the second shielding wall pillar being electrically coupled to the conductor pillar; and

a third shielding wall pillar, disposed between the third conductive layer and the fourth conductive layer, the third shielding wall pillar being electrically connected to one of the third conductive layer and located at a portion of an external region surrounding the conductor pillar between the third conductive layer and the fourth conductive layer and electrically coupled to the conductor pillar.

30. The interconnection structure as claimed in claim 29, wherein the cross-sectional shape of the conductor pillar going through between the first conductive layer, the second conductive layer, the third conductive layer and the fourth conductive layer is a first geometric shape, the cross-sectional shape of the first shielding wall pillar going through between the first conductive layer and the second conductive layer is a second geometric shape, the cross-sectional shape of the second shielding wall pillar going through between the second conductive layer and the third conductive layer is a third geometric shape and the cross-sectional shape of the third shielding wall pillar going through between the third conductive layer and the fourth conductive layer is a fourth geometric shape, wherein the first geometric shape is different from the second geometric shape, the third geometric shape and the fourth geometric shape.

31. The interconnection structure as claimed in claim 30, wherein the first geometric shape is circle shape, and the second geometric shape, the third geometric shape and the fourth geometric shape are semi-moon shape, wherein the concave edge of the semi-moon shape faces frontward or backward to the conductor pillar.