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MEMORY DEVICE AND SEMICONDUCTOR DEVICE

  • US 20120188814A1
  • Filed: 01/13/2012
  • Published: 07/26/2012
  • Est. Priority Date: 01/26/2011
  • Status: Active Grant
First Claim
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1. A memory device comprising:

  • a driver circuit; and

    a cell array over the driver circuit,wherein the cell array comprises a plurality of memory cells and a plurality of wirings,wherein at least one of the plurality of wirings is electrically connected to the plurality of memory cells,wherein the driver circuit is electrically connected to each of the plurality of wirings at a portion inside the cell array,wherein the plurality of memory cells each comprise a transistor and a capacitor electrically connected to the transistor, andwherein the transistor comprises an oxide semiconductor.

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