Low-crystallization temperature MTJ for Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM)
First Claim
1. A spin-torque transfer memory random access memory (STTMRAM) element, employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
- a magnetic tunnel junction (MTJ) including,an anti-ferromagnetic (AF) layer;
a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer;
a barrier layer formed upon the fixed layer;
a free layer comprised of a low-crystallization temperature magnetization layer made of an alloy of CoFeB—
Z where Z is made of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), the free layer having a magnetization that is switchable;
wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.
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Accused Products
Abstract
A spin-torque transfer memory random access memory (STTMRAM) element is disclosed and has a fixed layer, a barrier layer formed upon the fixed layer, and a free layer comprised of a low-crystallization temperature alloy of CoFeB—Z where Z is below 25 atomic percent of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer.
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Citations
27 Claims
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1. A spin-torque transfer memory random access memory (STTMRAM) element, employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
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a magnetic tunnel junction (MTJ) including, an anti-ferromagnetic (AF) layer; a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer; a barrier layer formed upon the fixed layer; a free layer comprised of a low-crystallization temperature magnetization layer made of an alloy of CoFeB—
Z where Z is made of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), the free layer having a magnetization that is switchable;wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A spin-torque transfer memory random access memory (STTMRAM) element, employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
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a magnetic tunnel junction (MTJ) including, an anti-ferromagnetic (AF) layer; a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer; a barrier layer formed upon the fixed layer; a free layer is comprised of a low-crystallization magnetic layer, a non-magnetic separation layer, and a magnetic layer; wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer. - View Dependent Claims (16, 17, 18)
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19. A spin-torque transfer memory random access memory (STTMRAM) element, employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
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a magnetic tunnel junction (MTJ) including, an anti-ferromagnetic (AF) layer; a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer; a barrier layer formed upon the fixed layer; a free layer comprised of a low-crystallization temperature magnetization layer made of a magnetic alloy of composition CoxFe(1−
x)ByZ, where ‘
x’
is between 20-80 atomic percent, and ‘
y’
is between 10-30 atomic percent, and ‘
Z’
is less than 25 atomic percept of one or more of the following materials;
titanium, yittrium, zirconium, and vanadium, the free layer having a magnetization that is switchable;wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer. - View Dependent Claims (20)
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21. A system including a spin-torque transfer memory random access memory (STTMRAM) element, the STTMRAM element employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
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a magnetic tunnel junction (MTJ) including, an anti-ferromagnetic (AF) layer; a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer; a barrier layer formed upon the fixed layer; a free layer comprised of a low-crystallization temperature magnetization layer made of an alloy of CoFeB—
Z where Z is made of one or more of titanium, (Ti), yittrium (Y), zirconium (Zr), and vanadium (V), the free layer having a magnetization that is switchable;wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer. - View Dependent Claims (22, 23, 24, 25)
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26. A spin-torque transfer memory random access memory (STTMRAM) element, employed in a STTMRAM array, where the STTMRAM element received electric current for storage of digital information, the STTMRAM element comprising:
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a magnetic tunnel junction (MTJ) including, an anti-ferromagnetic (AF) layer; a fixed layer having a magnetization that is substantially fixed in one direction and that comprises a first magnetic layer, an AF coupling layer and a second magnetic layer; a barrier layer formed upon the fixed layer; a free layer is synthetic and comprised of a high-polarization magnetic layer, a low-crystallization magnetic layer, a non-magnetic separation layer, and a magnetic layer; wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the magnetization of the free layer between parallel and anti-parallel states relative to the magnetization of the fixed layer. - View Dependent Claims (27)
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Specification