NITRIDE SEMICONDUCTOR LASER DIODE
First Claim
1. A nitride semiconductor laser diode comprising:
- a substrate;
an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate;
an active layer having a light emitting layer including InxAlyGa1−
x−
yN (0<
x<
1, 0≦
y<
1, and 0<
x+y<
1) and disposed on the n-side nitride semiconductor layer; and
a p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer;
wherein the lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater,dislocations originated in the active layer penetrate through the p-side nitride semiconductor layer with a dislocation density of 1×
106 cm−
2 or greater, anda concentration distribution of the p-type impurity in a depth direction from the light emitting layer toward the surface of the p-side nitride semiconductor layer has a local maximum with the concentration of the p-type impurity of 5×
106 cm−
3 or greater in a range within 300 nm from the top surface of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after passing the local maximum, the concentration of the p-type impurity is not less than 6×
1017 cm−
3 in the range within 300 nm.
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Accused Products
Abstract
A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including InxAlyGa1−x−yN (0<x<1, 0 y<1, 0<x+y<1), and a p-side nitride semiconductor layer formed on the active layer. In the nitride semiconductor laser diode, the lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater, dislocations originated in the active layer penetrate through the p-side nitride semiconductor layer, with the dislocation density in the p-side nitride semiconductor layer being 1×106 cm−2 or greater, and the concentration distribution of p-type impuritys in the depth direction is such that, from the light emitting layer toward the surface of the p-side nitride semiconductor layer, the concentration of the p-type impurity reaches a maximum value of 5×1018 cm−3 or greater within a range of 300 nm from the top portion of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after reaching the maximum value, the concentration remains at 6×1017 cm−3 or greater in the above-described range of 300 nm.
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Citations
15 Claims
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1. A nitride semiconductor laser diode comprising:
-
a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light emitting layer including InxAlyGa1−
x−
yN (0<
x<
1, 0≦
y<
1, and 0<
x+y<
1) and disposed on the n-side nitride semiconductor layer; anda p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer; wherein the lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater, dislocations originated in the active layer penetrate through the p-side nitride semiconductor layer with a dislocation density of 1×
106 cm−
2 or greater, anda concentration distribution of the p-type impurity in a depth direction from the light emitting layer toward the surface of the p-side nitride semiconductor layer has a local maximum with the concentration of the p-type impurity of 5×
106 cm−
3 or greater in a range within 300 nm from the top surface of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after passing the local maximum, the concentration of the p-type impurity is not less than 6×
1017 cm−
3 in the range within 300 nm. - View Dependent Claims (2, 3, 4, 12, 13, 14, 15)
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5. A nitride semiconductor laser diode comprising;
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a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer of a quantum well structure including a well layer including InxAlyGa1−
x−
yN (0<
x<
1, 0≦
y<
1, 0<
x+y<
1), and disposed on the n-side nitride semiconductor layer; anda p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer; wherein the n-side nitride semiconductor layer includes a GaN layer or AlGaN layer the well layer in the active layer has a lasing wavelength of 500 nm or greater, dislocations originated in the well layer penetrate through the p-side nitride semiconductor layer so that a dislocation density is 1×
106 cm−
2 or greater in the p-side nitride semiconductor layer, andwherein the nitride semiconductor laser diode comprises a first p-type nitride semiconductor layer in a range within 300 nm from the top surface of the well layer which is closest to the p-side nitride semiconductor layer, the first p-type nitride semiconductor layer being made of an Al-containing nitride semiconductor, having a bandgap larger than that of the well layer and having a p-type impurity concentration of 5×
1018 cm−
3 or greater anda second p-type semiconductor layer on the first p-type nitride semiconductor layer, the second p-type semicinductor layer having, within the 300 nm range, a p-type impurity concentration smaller than a p-type impurity concentration in the first p-type semiconductor layer and not smaller than 6×
1017 cm−
3. - View Dependent Claims (6, 7, 8, 9, 10)
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11. A nitride semiconductor laser diode comprising:
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a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer of a multi quantum well structure having a well layer including InxAlyGa1−
x−
yN (0<
x<
1, 0≦
y<
1, 0<
x+y<
1), and disposed on the n-side nitride semiconductor layer; anda p-side nitride semiconductor layer containing a p-type impurity and disposed on the active layer; wherein the n-side nitride semiconductor layer includes a GaN layer or AlGaN layer, the active layer includes a well layer having lasing wavelength of 500 nm or greater and a barrier layer located closest to the p-side in the active layer and having a thickness of 300 nm or less, the p-side nitride semiconductor layer includes, from the side closer to the active layer, a first p-type nitride semiconductor layer made of a nitride semiconductor containing Al having a band gap larger than the band gap of the well layer, having a p-type impurity with a concentration of 5×
1018 cm−
3 or greater, and having a thickness of 3 to 50 nm,a second p-type nitride semiconductor layer having a p-type impurity concentration smaller than a p-type impurity concentration of the first semiconductor layer and not smaller than 6×
1017 cm−
3,a third p-type nitride semiconductor layer having a band gap larger than the band gap of the second p-type nitride semiconductor layer and smaller than the band gap of the first p-type nitride semiconductor layer, and a fourth p-type nitride semiconductor layer having a p-type impurity concentration of 5×
1019 cm3 or greater;
wherein dislocations originated in the well layer penetrate through the p-side nitride semiconductor layer and the dislocation density of the p-side nitride semiconductor layer is 1×
106 cm−
2 or greater.
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Specification