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DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20120190145A1
  • Filed: 04/05/2012
  • Published: 07/26/2012
  • Est. Priority Date: 06/17/2008
  • Status: Active Grant
First Claim
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1. A method of manufacturing a display device, comprising the steps of:

  • forming source/drain electrodes of a thin-film transistor on a substrate, while forming a pixel electrode connected to the source/drain electrodes;

    forming an insulating partition wall layer on the substrate, where the partition wall layer has a first opening extending to between the source electrode and the drain electrode; and

    forming a channel-region semiconductor layer by depositing a semiconductor layer over the partition wall layer, whereinthe channel-region semiconductor layer is on the bottom of the first opening to be separate from a upper part of the partition wall layer.

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