SEMICONDUCTOR DEVICE HAVING AN AIRBRIDGE AND METHOD OF FABRICATING THE SAME
First Claim
1. A method of forming a device having an airbridge on a substrate, the method comprising:
- forming a plated conductive layer of the airbridge over at least a photoresist layer on a portion of the substrate, the plated conductive layer defining a corresponding opening for exposing a portion of the photoresist layer;
undercutting the photoresist layer to form a gap in the photoresist layer beneath the plated conductive layer at the opening;
forming an adhesion layer on the plated conductive layer and the exposed portion of the photoresist layer, the adhesion layer having a break at the gap beneath the plated conductive layer;
removing the photoresist layer and a portion of the adhesion layer formed on the exposed portion of the photoresist layer, the removing comprising etching the photoresist layer through the break in the adhesion layer; and
forming an insulating layer on at least the adhesion layer, which enhances adhesion of the insulating layer to the plated conductive layer.
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Accused Products
Abstract
A method of forming a device having an airbridge on a substrate includes forming a plated conductive layer of the airbridge over at least a photoresist layer on a portion of the substrate, the plated conductive layer defining a corresponding opening for exposing a portion of the photoresist layer. The method further includes undercutting the photoresist layer to form a gap in the photoresist layer beneath the plated conductive layer at the opening, and forming an adhesion layer on the plated conductive layer and the exposed portion of the photoresist layer, the adhesion layer having a break at the gap beneath the plated conductive layer. The photoresist layer and a portion of the adhesion layer formed on the exposed portion of the photoresist layer is removed, which includes etching the photoresist layer through the break in the adhesion layer. An insulating layer is formed on at least the adhesion layer, enhancing adhesion of the insulating layer to the plated conductive layer.
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Citations
20 Claims
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1. A method of forming a device having an airbridge on a substrate, the method comprising:
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forming a plated conductive layer of the airbridge over at least a photoresist layer on a portion of the substrate, the plated conductive layer defining a corresponding opening for exposing a portion of the photoresist layer; undercutting the photoresist layer to form a gap in the photoresist layer beneath the plated conductive layer at the opening; forming an adhesion layer on the plated conductive layer and the exposed portion of the photoresist layer, the adhesion layer having a break at the gap beneath the plated conductive layer; removing the photoresist layer and a portion of the adhesion layer formed on the exposed portion of the photoresist layer, the removing comprising etching the photoresist layer through the break in the adhesion layer; and forming an insulating layer on at least the adhesion layer, which enhances adhesion of the insulating layer to the plated conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming an airbridge extending from a conductive area of a gallium arsenide (GaAs) semiconductor device, the method comprising:
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applying a first photoresist layer on a substrate, with or without a device, and developing the first photoresist layer to form a first photoresist pattern; applying a conductive lower layer on the first photoresist layer; applying a conductive seed layer on the conductive lower layer; applying a second photoresist layer on the conductive seed layer, and etching the second photoresist layer to form a second photoresist pattern; applying a plated gold layer on the conductive seed layer using an electroplating process; removing the second photoresist pattern to form an opening in the plated gold layer corresponding to the airbridge of the semiconductor device, the opening exposing a portion of the conductive seed layer; removing the exposed portion of the conductive seed layer, exposing a portion of the first photoresist pattern within the opening in the plated gold layer; partially etching the exposed portion of the first photoresist pattern using oxygen plasma, the partial etching undercutting the photoresist layer to form a gap between the plated gold layer and the first photoresist pattern at the opening in the plated gold layer; applying an adhesion layer on the plated gold layer and the exposed portion of the first photoresist pattern, the adhesion layer having a break at the gap between the plated gold layer and the first photoresist pattern; removing the first photoresist pattern using a solvent applied to the first photoresist pattern through the break in the adhesion layer, the solvent lifting off a portion of the adhesion layer on the exposed portion of the first photoresist pattern; and applying an insulating layer on the adhesion layer to enhance adhesion of the insulating layer to the plated gold layer. - View Dependent Claims (14, 15, 16, 17)
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18. A semiconductor device, comprising:
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a device pattern formed on a semiconductor substrate; a seed layer formed on the device pattern; an airbridge formed on the seed layer, the airbridge comprising a plated conductive material and defining an opening exposing a portion of the device pattern; an adhesion layer formed on the airbridge layer and extending over at least a portion of sidewalls of the opening defined by the airbridge; and an insulating layer formed on the adhesion layer, the adhesion layer enhancing adhesion of the insulating layer to the plated conductive material of the airbridge.
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19. The device of claim 19, wherein the plated conductive material comprises gold and the insulating layer comprises silicon nitride.
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20. The device of claim 20, wherein the adhesion layer comprises a conductive adhesion material.
Specification