Low Noise Amplifiers Including Group III Nitride Based High Electron Mobility Transistors
First Claim
Patent Images
1. A monolithic microwave integrated circuit low noise amplifier comprising:
- a substrate;
an input port on the substrate for receiving an input signal to be amplified;
a first Group III-nitride based transistor on the substrate and coupled to the input port, wherein the first Group III-nitride based transistor is configured to provide a first stage of amplification to the input signal;
a second Group III-nitride based transistor on the substrate and coupled to the first Group III-nitride based transistor, wherein the second Group III-nitride based transistor is configured to provide a second stage of amplification to the input signal; and
an output port on the substrate and coupled to the second Group III-nitride based transistor.
2 Assignments
0 Petitions
Accused Products
Abstract
A low noise amplifier includes a first Group III-nitride based transistor and a second Group III-nitride based transistor coupled to the first Group III-nitride based transistor. The first Group III-nitride based transistor is configured to provide a first stage of amplification to an input signal, and the second Group III-nitride based transistor is configured to provide a second stage of amplification to the input signal.
-
Citations
18 Claims
-
1. A monolithic microwave integrated circuit low noise amplifier comprising:
-
a substrate; an input port on the substrate for receiving an input signal to be amplified; a first Group III-nitride based transistor on the substrate and coupled to the input port, wherein the first Group III-nitride based transistor is configured to provide a first stage of amplification to the input signal; a second Group III-nitride based transistor on the substrate and coupled to the first Group III-nitride based transistor, wherein the second Group III-nitride based transistor is configured to provide a second stage of amplification to the input signal; and an output port on the substrate and coupled to the second Group III-nitride based transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A monolithic microwave integrated circuit low noise amplifier that has a third order intercept greater than 25 dBm at a frequency that is in the range of 2.6 GHz to 3.95 GHz.
-
14. A monolithic microwave integrated circuit low noise amplifier that has a noise figure less than 3.0 dB at a frequency that is in the range of 2.6 GHz to 3.95 GHz.
-
15. A low noise amplifier comprising:
-
a first Group III-nitride based transistor configured to provide a first stage of amplification to an input signal; and a second Group III-nitride based transistor coupled to the first Group III-nitride based transistor and configured to provide a second stage of amplification to the input signal. - View Dependent Claims (16, 17, 18)
-
Specification