SIMULTANEOUS PHASE AND AMPLITUDE CONTROL USING TRIPLE STUB TOPOLOGY AND ITS IMPLEMENTATION USING RF MEMS TECHNOLOGY

• US 20120194296A1
• Filed: 09/15/2009
• Published: 08/02/2012
• Est. Priority Date: 09/15/2009
• Status: Abandoned Application

• Current Assignee: Mehmet Unlu, Simsek Demir, Tayfun Akin
• Original Assignee: Mehmet Unlu, Simsek Demir, Tayfun Akin
• Inventors: Akin, Tayfun, Unlu, Mehmet, Demir, Simsek
• Application Number:
  US13/496,255
• Publication Number:
  US 20120194296A1
• Time in Patent Office: Days
• US Class Current: 333/156
• CPC Class Codes: H01P 1/184 Strip line phase-shifters H01P1/181, H01P1/185, H01P1/19 take precedence
• CPC Class Codes: H01P 1/227 Strip line attenuators H01P1/23 takes precedence

Abstract

This invention relates to techniques for controlling the amplitude and the insertion phase of an input signal in RF applications. More particularly, this invention relates to phase shifters, vector modulators, and attenuators employing both semi-conductor and RF microelectromechanical systems (MEMS) technologies.

Claims

1. A reconfigurable phase shifting, amplitude, and impedance tuning circuit that is implemented using the triple stub topology, comprising:

three or more stubs that are used as loading elements and have adjustable electrical lengths; and

two or more transmission lines/waveguides that connect the stubs and have adjustable electrical lengths; and

wherein phase shifting, amplitude control, and impedance tuning is obtained simultaneously.

2. The circuit of claim 1, wherein the transmission lines/waveguides that are used in the circuit are implemented using planar structures such as coplanar waveguides, microstrip lines or 3D structures such as coaxial lines, rectangular waveguides, circular waveguides, striplines, and the adjustability of electrical lengths of the stubs and interconnection lines are realized by means of plurality of passive components, such as MEMS components such as (switches, varactors, digital capacitors), or plurality of active components such as PIN diodes, FET transistors, bipolar transistors.

3. The circuit of claim 2, wherein the MEMS components are either fabricated monolithically with the transmission lines/waveguides, or fabricated independently, and then, placed on the transmission lines/waveguides and connected by means such as wirebonds, ribbons, soldering or welding.

4. The circuit of claim 1, wherein the whole circuit is implemented in a monolithic fabrication process.

5. The circuit of claim 1, wherein the circuit is realized as a analog, digital, or quasi-analog circuit depending on how the adjustability of the electrical lengths of the stubs and interconnection lines are realized.

6-153. -153. (canceled)