PACKAGING METHOD OF WAFER LEVEL CHIPS

• US 20120196393A1
• Filed: 06/22/2011
• Published: 08/02/2012
• Est. Priority Date: 01/27/2011
• Status: Active Grant

• Current Assignee: Himax Technologies Ltd. (Himax Technologies Incorporated)
• Original Assignee: Himax Technologies Ltd. (Himax Technologies Incorporated)
• Inventors: Ho, Sin-Hua
• Granted Patent: US 8,227,271 B1
• Time in Patent Office: Days
• US Class Current: 438/27
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A packaging method of wafer level chips including following steps is provided. First, a plurality of chips attached on a first film is provided, and the chips on the first film are disposed respectively corresponding to a plurality of electrode patterns of a substrate. Then, a phosphor layer is respectively formed on at least one surface of each of the chips. Next, a second film is disposed on the phosphor layers, and the second film is opposite to the first film. Further, the first film is removed from the base surface of each of the chips. Then, the base surfaces of the chips are attached to the substrate. Afterward, each of the chips is electrically connected with the corresponding electrode pattern through a wire bonding. Finally, a packaging gel is provided to cover each of the chips, and the packaging gel is solidified.

Claims

1. A packaging method of wafer level chips, comprising:

providing a plurality of chips attached on a first film, wherein the chips on the first film are disposed respectively corresponding to a plurality of electrode patterns of a substrate, and a base surface of each of the chips is contacted with the first film;

respectively forming a phosphor layer on at least one surface of each of the chips;

disposing a second film on the phosphor layers, and the second film being opposite to the first film;

removing the first film from the base surface of each of the chips;

attaching the base surfaces of the chips to the substrate;

electrically connecting each of the chips with the corresponding electrode pattern through a wire bonding; and

providing a packaging gel to encompass each of the chips, and solidifying the packaging gel.

2. The packaging method of the wafer level chips according to claim 1, further comprising removing the second film before electrically connecting each of the chips with the corresponding electrode pattern by the wire bonding.

3. The packaging method of the wafer level chips according to claim 1, wherein the attaching step comprises disposing an attaching material on the base surfaces to make that the base surfaces being attached to the substrate through the attaching material.

4. The packaging method of the wafer level chips according to claim 3, wherein the attaching step further comprises a reflow process to reflow the attaching material between the base surfaces and the substrate.

5. The packaging method of the wafer level chips according to claim 1, wherein the phosphor layer is formed through a coating process which comprises a spin-coating method, a printing technique, a scraper method, a screen printing method, a spraying method, an electrophoresis deposit method, a evaporation method or a sputter process.

6. The packaging method of the wafer level chips according to claim 3, wherein the attaching step further comprises baking the attaching material between the base surfaces and the substrate.

7. The packaging method of the wafer level chips according to claim 3, wherein the attaching material is a solder paste, a silver glue or a eutectoid material.

8. The packaging method of the wafer level chips according to claim 1, wherein each of the chips comprises a bump and a die, and the bump is disposed between the phosphor layer and the die.

9. The packaging method of the wafer level chips according to claim 7, wherein the bump of each of the chips is electrically connected with the corresponding electrode through the wire bonding.

10. The packaging method of the wafer level chips according to claim 1, wherein the first film and the second film are blue tapes.

11. The packaging method of the wafer level chips according to claim 1, wherein the substrate is a silicon substrate, a ceramic substrate or a substrate formed by a resin injection method.

12. The packaging method of the wafer level chips according to claim 1, wherein the chip is a light emitting diode chip.