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METHOD OF READING AND WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH ERROR CORRECTING CODE

  • US 20120198313A1
  • Filed: 01/31/2012
  • Published: 08/02/2012
  • Est. Priority Date: 01/31/2011
  • Status: Active Grant
First Claim
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1. A method of reading states of bits in an ST-MRAM array, comprising:

  • (a) reading data bits, ECC bits, and one or more inversion status bits from the ST-MRAM array;

    (b) calculating a plurality of parity bits using one of an even or odd number of the data bits;

    (c) generating corrected data bits and corrected ECC bits using the parity bits and ECC bits;

    (d) storing the corrected data bits and corrected ECC bits if the inversion status bit is in a first state;

    (e) inverting the corrected data bits if the inversion status bit is in a second state;

    (f) storing the inverted corrected data bits and the corrected ECC bits if step (e) is accomplished and the parity bits are calculated using an even number of data bits;

    (g) inverting the corrected ECC bits if the inversion status bit is in the second state and the parity bits are calculated using an odd number of data bits; and

    (h) storing the inverted corrected data bits and the inverted corrected ECC bits if steps (e) and (g) are accomplished.

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