METHOD FOR FABRICATING PHOTOVOLTAIC CELLS

• US 20120199202A1
• Filed: 02/03/2012
• Published: 08/09/2012
• Est. Priority Date: 02/03/2011
• Status: Abandoned Application

• Current Assignee: IMEC International, Katholieke Unversiteit Leuven
• Original Assignee: IMEC International, Katholieke Universiteit Leuven
• Inventors: Prajapati, Victor
• Application Number:
  US13/365,874
• Publication Number:
  US 20120199202A1
• Time in Patent Office: Days
• US Class Current: 136/261
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method for fabricating a crystalline silicon photovoltaic cell is disclosed. In one aspect, the method includes a) providing a crystalline silicon substrate of a first dopant type, b) performing an implantation, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate, c) after the implantation, depositing a hydrogen containing layer on the front surface of the substrate, and d) after depositing the hydrogen containing layer, performing a thermal treatment, thereby electrically activating the dopant of the second type.

Claims

1. A method of fabricating a crystalline silicon photovoltaic cell, the method comprising:

providing a crystalline silicon substrate of a first dopant type;

performing an implantation process, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate;

after the implantation, depositing a hydrogen containing layer on the front surface of the substrate; and

after depositing the hydrogen containing layer, performing a thermal treatment, thereby electrically activating the dopant of the second type.

2. The method according to claim 1, wherein depositing the hydrogen containing layer comprises depositing a hydrogen-rich silicon nitride layer.

3. The method according to claim 1, wherein depositing the hydrogen containing layer comprises depositing an antireflection coating (ARC) and/or a front surface passivation layer.

4. The method according to claim 1, wherein performing the thermal treatment comprises performing a rapid thermal annealing (RTA).

5. The method according to claim 1, wherein the thermal treatment is performed at a temperature in the range between about 600°

C. and 1000°

C. for a duration of from a few tens of seconds to a few minutes.

6. The method according to claim 1, the method further comprising, before the thermal treatment, generating a shallow region corresponding to an emitter region of the crystalline silicon photovoltaic cell having a depth in between about 30 nm to 300 nm.

7. The method according to claim 1, the method further comprising, after the thermal treatment, generating a shallow junction corresponding to an emitter region of the crystalline silicon photovoltaic cell having a depth in between about 100 nm to 500 nm.

8. The method according to claim 1, wherein the crystalline silicon substrate of the first dopant type is a p-type substrate and the dopant of the second type is a n-type dopant.

9. The method according to claim 1, wherein the crystalline silicon substrate of the first dopant type is an n-type substrate and the dopant of the second type is a p-type dopant.

10. The method according to claim 1, wherein the crystalline silicon substrate comprises a monocrystalline substrate or a multicrystalline substrate.

11. The method according to claim 1, wherein depositing a hydrogen containing layer on the front surface of the substrate is performed directly after the implantation.

12. The method according to claim 1, further comprising combining the thermal treatment with one of the subsequent steps in the fabrication process.

13. The method according to claim 12, further comprising depositing a metal layer at a rear side of the substrate, and performing a metal firing, wherein the metal firing corresponds to the thermal treatment.

14. The method according claim 12, further comprising

providing a passivation layer or passivation stack at the rear side;

performing a rear side metallization and a front side metallization; and

co-firing of the rear side metallization and the front side metallization.

15. The method according to claim 14, wherein the passivation layer or passivation stack at the rear side is provided before performing the thermal treatment and after depositing the hydrogen containing layer on the front surface of the substrate.

16. A crystalline silicon photovoltaic cell fabricated by the method according to claim 1.

17. A method of fabricating a crystalline silicon photovoltaic cell, the method comprising:

providing a crystalline silicon substrate of a first dopant type;

performing an implantation process, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate;

depositing a hydrogen containing layer on the front surface of the substrate; and

performing a thermal treatment, thereby electrically activating the dopant of the second type.

18. The method according to claim 17, wherein the thermal treatment is performed after the process of depositing a hydrogen containing layer.

19. A crystalline silicon photovoltaic cell fabricated by the method according to claim 17.