METHOD FOR FABRICATING PHOTOVOLTAIC CELLS
First Claim
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1. A method of fabricating a crystalline silicon photovoltaic cell, the method comprising:
- providing a crystalline silicon substrate of a first dopant type;
performing an implantation process, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate;
after the implantation, depositing a hydrogen containing layer on the front surface of the substrate; and
after depositing the hydrogen containing layer, performing a thermal treatment, thereby electrically activating the dopant of the second type.
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Abstract
A method for fabricating a crystalline silicon photovoltaic cell is disclosed. In one aspect, the method includes a) providing a crystalline silicon substrate of a first dopant type, b) performing an implantation, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate, c) after the implantation, depositing a hydrogen containing layer on the front surface of the substrate, and d) after depositing the hydrogen containing layer, performing a thermal treatment, thereby electrically activating the dopant of the second type.
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Citations
19 Claims
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1. A method of fabricating a crystalline silicon photovoltaic cell, the method comprising:
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providing a crystalline silicon substrate of a first dopant type; performing an implantation process, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate; after the implantation, depositing a hydrogen containing layer on the front surface of the substrate; and after depositing the hydrogen containing layer, performing a thermal treatment, thereby electrically activating the dopant of the second type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating a crystalline silicon photovoltaic cell, the method comprising:
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providing a crystalline silicon substrate of a first dopant type; performing an implantation process, thereby introducing dopants of a second type opposite to the first type at a front side of the crystalline silicon substrate; depositing a hydrogen containing layer on the front surface of the substrate; and performing a thermal treatment, thereby electrically activating the dopant of the second type. - View Dependent Claims (18, 19)
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Specification