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TRENCH MOS BARRIER SCHOTTKY (TMBS) HAVING MULTIPLE FLOATING GATES

  • US 20120199902A1
  • Filed: 02/04/2011
  • Published: 08/09/2012
  • Est. Priority Date: 02/04/2011
  • Status: Active Grant
First Claim
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1. A semiconductor rectifier, comprising:

  • a semiconductor substrate having a first type of conductivity;

    an epitaxial layer formed on the substrate having the first type of conductivity and being more lightly doped than the substrate;

    a plurality of floating gates formed in the epitaxial layer;

    a metal layer disposed over the epitaxial layer to form a Schottky contact therebetween; and

    a first electrode formed over the metal layer and a second electrode formed on a backside of the substrate.

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