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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20120199904A1
  • Filed: 01/26/2012
  • Published: 08/09/2012
  • Est. Priority Date: 02/03/2011
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a first conductive type of a first conductive type well formed in the semiconductor substrate;

    a second conductive type of a second conductive type well formed in the semiconductor substrate and formed adjacent to the first conductive type well;

    a gate insulating film arranged over the semiconductor substrate across a part of the first conductive type well and a part of the second conductive type well;

    a gate electrode arranged over the gate insulating film;

    the second conductive type of a second impurity region formed over a surface layer of the first conductive type well;

    the second conductive type of a first impurity region formed over a surface layer of the second conductive type well and formed apart from the gate electrode in a plan view; and

    a field drain insulating part in which at least a part of the field drain insulating part is formed under the gate insulating film and which is formed over a surface of the second conductive type well between under the gate insulating film and the first impurity region,wherein the field drain insulating part comprises;

    a first insulating film positioned at least in a center part of the field drain insulating part in a plan view; and

    a high dielectric constant insulating film arranged at least at a region close to the first impurity region in an edge of a bottom surface of the field drain insulating part and having a higher dielectric constant than the first insulating film.

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