SEMICONDUCTOR DEVICE INCLUDING ANTIFUSE ELEMENT
First Claim
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1. A semiconductor device having an antifuse element, the antifuse element comprising:
- a first semiconductor region of a first conductivity type;
a diffusion region of a second conductivity type formed in the first semiconductor region, the diffusion region being electrically connected to a first electrode via a contact electrode, the diffusion region having a predetermined edge of non-linear shaped so as to form a concave portion;
a second semiconductor region of the second conductivity type electrically connected to the diffusion region, the second semiconductor region and the diffusion region being in a conductive state, and the second semiconductor region being in contact with the predetermined edge of the diffusion region;
an insulating film formed on the second semiconductor region; and
a second electrode formed on the insulating film to cover the second semiconductor region,wherein the antifuse element can be programmed by a dielectric breakdown of the insulating film by applying a voltage between the second semiconductor region via the first electrode and the second electrode.
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Abstract
An element isolation region exists at a side opposite to a diffusion layer region as seen from a channel region, without another electrode to which the same potential as one applied to the diffusion layer region is applied interposed between the channel region and the element isolation region. The electric field applied to the gate insulating film is not uniform and the magnitude of the electric field is increased when approaching closer to the diffusion layer region. Therefore, breakdown is likely to occur at parts closer to the diffusion layer region.
8 Citations
20 Claims
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1. A semiconductor device having an antifuse element, the antifuse element comprising:
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a first semiconductor region of a first conductivity type; a diffusion region of a second conductivity type formed in the first semiconductor region, the diffusion region being electrically connected to a first electrode via a contact electrode, the diffusion region having a predetermined edge of non-linear shaped so as to form a concave portion; a second semiconductor region of the second conductivity type electrically connected to the diffusion region, the second semiconductor region and the diffusion region being in a conductive state, and the second semiconductor region being in contact with the predetermined edge of the diffusion region; an insulating film formed on the second semiconductor region; and a second electrode formed on the insulating film to cover the second semiconductor region, wherein the antifuse element can be programmed by a dielectric breakdown of the insulating film by applying a voltage between the second semiconductor region via the first electrode and the second electrode. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device having an antifuse element, the antifuse element comprising:
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a first semiconductor region of a first conductivity type; a diffusion region of a second conductivity type formed in the first semiconductor region, the diffusion region being electrically connected to a first electrode via a contact electrode; a second semiconductor region of the second conductivity type electrically connected to the diffusion region, the diffusion region and the second semiconductor region being arranged in a first direction; an insulating film formed on the second semiconductor region; and a second electrode formed on the insulating film, a first width of the second electrode in a second direction different from the first direction being narrower than a second width of the diffusion region between first and second edges thereof that crossing the second direction, wherein the antifuse element can be programmed by a dielectric breakdown of the insulating film by applying a voltage between the second semiconductor region via the first electrode and the second electrode. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A. semiconductor device having an antifuse element, the antifuse element comprising:
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a first semiconductor region of a first conductivity type; a diffusion region of a second conductivity type formed in the first semiconductor region, the diffusion region being electrically connected to a first electrode via a contact electrode; a second semiconductor region of the second conductivity type electrically connected to the diffusion region, the second semiconductor being in contact with the diffusion region; an insulating film formed on the second semiconductor region; and a second electrode formed on the insulating film, the second electrode having an edge aligned with an edge of the insulating film, wherein the antifuse element can be programmed by a dielectric breakdown of the insulating film by applying a voltage between the second semiconductor region via the first electrode and the second electrode. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification