METHOD FOR RECYCLING A SOURCE SUBSTRATE

• US 20120199956A1
• Filed: 02/07/2012
• Published: 08/09/2012
• Est. Priority Date: 02/08/2011
• Status: Abandoned Application

• Current Assignee: Soitec S.A.
• Original Assignee: Soitec S.A.
• Inventors: Guenard, Pascal, Veytizou, Christelle, Lecomte, Monique, Rigal, Sophie, Sotta, David, Janin, Fabienne
• Application Number:
  US13/368,028
• Publication Number:
  US 20120199956A1
• Time in Patent Office: Days
• US Class Current: 257/629
• CPC Class Codes: H01L 21/02032 by reclaiming or re-processing
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

The present invention relates to process for recycling a source substrate that has a surface region and regions in relief on the surface region, with the regions in relief corresponding to residual regions of a layer of the source substrate that were not being separated from the rest of the source substrate during a prior removal step. The process includes selective electromagnetic irradiation of the source substrate at a wavelength such that the damaged material of the surface region absorbs the electromagnetic irradiation. The present invention also relates to a recycled source substrate and to a process for transferring a layer from a source substrate recycled for this purpose.

Claims

1. A process for recycling a source substrate comprising a surface region and regions in relief on the surface region, with the regions in relief corresponding to residual regions of a layer of the source substrate that were not separated from the rest of the source substrate during a prior removal step, implementing cleavage at a weakened zone formed by damaged material of the source substrate, wherein the surface region corresponds to part of the weakened zone not separated from the rest of the source substrate during the prior removal step, wherein the recycling process comprises applying selective electromagnetic irradiation to the source substrate at a wavelength such that the damaged material of the surface region absorbs the electromagnetic irradiation to facilitate selective removal of the regions in relief.

2. The process according to claim 1, in which the regions in relief correspond to a ring of material from the layer of the source substrate or to other non-transferred zones of material from the layer of the source substrate which zones are distributed randomly on the surface region of the source substrate.

3. The process according to claim 1, in which the selective electromagnetic irradiation is carried out over the entire exposed surface of the source substrate.

4. The process according to claim 1, in which the selective electromagnetic irradiation is controlled by an optical device that detects the regions in relief so that the irradiation is carried out locally on the detected regions in relief.

5. The process according to claim 4, in which the optical device detects the regions in relief via the difference in optical contrast between the damaged material of the weakened zone and the undamaged material of the source substrate.

6. The process according to claim 1, in which the source substrate is a bulk material of SiC or a binary, ternary or quaternary III-N material;

or is a composite structure of GaNOS, InGaNOS, SiCOI or SiCopSiC.

7. The process according to claim 1, in which the weakened zone is generated by implanting ionic species into the source substrate.

8. The process according to claim 1, which further comprises conducting chemical-mechanical polishing of the surface region of the source substrate following the selective electromagnetic irradiation of the regions in relief.

9. The process according to claim 8, wherein the chemical-mechanical polishing includes a colloidal acid solution that contains an oxidizing agent, or an additive of abrasive particles, or both.

10. The process according to claim 1, wherein the selective electromagnetic irradiation of the source substrate is carried out by a laser.

11. The process according to claim 10, in which the material of the source substrate is GaN and the laser emits a wavelength longer than or equal to 370 nm.

12. The process according to claim 10, in which the material of the source substrate is SiC and the laser emits a wavelength longer than or equal to 415 nm.

13. The process according to claim 10, in which the laser is a pulsed-mode yttrium-aluminium-garnet laser.

14. The process according to claim 13, in which the laser has a power density of about 0.1 to 2 J/cm².

15. The process according to claim 1, which further comprises epitaxially growing at least one layer of material on a surface of the source substrate.

16. The process according to claim 15, in which the epitaxial growth of material is carried out on the surface to which the selective electromagnetic irradiation is applied.

17. A recycled source substrate prepared by the process of claim 8 in a condition ready to provide an additional layer of material for transfer to a another support substrate.

18. A process for transferring a layer from a recycled source substrate, which comprises:

recycling the polished source substrate obtained by the process of claim 9;

removing a layer from the surface of the recycled source substrate by;

generating a weakened zone in the recycled source substrate at a depth bounding the thickness of the layer; and

applying a fracturing treatment to remove the layer.

19. The process of claim 18, which further comprises, prior to applying the fracturing treatment, bonding the recycled source substrate to a support substrate so that the fracturing treatment transfers the layer to the support substrate.

20. In a process for recycling a source substrate that has been used to supply a layer of surface material by a layer detachment and transfer process and which contains regions in relief relative to the detachment surface which regions include non-transferred zones of damaged material present on the surface of the source substrate, the improvement which comprises providing selective electromagnetic irradiation of the source substrate at a wavelength such that the damaged material of the surface regions in relief absorbs the electromagnetic irradiation to facilitate selective removal of such regions to thus facilitate recycling of the source substrate.

21. The process of claim 20, which further comprises removing the regions in relief from the surface of the source substrate, optionally with polishing, and then recycling the source substrate for removal of a further layer from the surface thereof.