CUSTOMIZED MANUFACTURING METHOD FOR AN OPTOELECTIRCAL DEVICE

• US 20120202303A1
• Filed: 04/23/2012
• Published: 08/09/2012
• Est. Priority Date: 02/26/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsieh, Min-Hsun
• Granted Patent: US 9,110,463 B2
• Time in Patent Office: Days
• US Class Current: 438/16
• CPC Class Codes: G05B 19/41865 characterised by job scheduling, process planning, material flow
• CPC Class Codes: G05B 2219/32036 Enter data, values for custom made articles
• CPC Class Codes: G06Q 10/06 Resources, workflows, human or project management; Enterprise or organisation planning; Enterprise or organisation modelling
• CPC Class Codes: G06Q 50/04 Manufacturing
• CPC Class Codes: Y02P 90/02 Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
• CPC Class Codes: Y02P 90/30 Computing systems specially adapted for manufacturing

Abstract

The disclosure provides a customized manufacturing method for an optoelectrical device. The customized manufacturing method comprises the steps of providing a manufacturing flow including a front-end flow, a customized module subsequent to the front-end flow, and a pause step between the front-end flow and the customized module, processing a predetermined amount of semi-manufactured products queued at the pause step, tuning the customized module in accordance with a customer'"'"'s request, and processing the semi-manufactured products by the tuned customized module to fulfill the customer'"'"'s request.

Claims

1. A method for manufacturing an optoelectronic device comprising the steps of:

providing a growth wafer;

growing an epitaxial stack having optoelectrical properties on the growth wafer to form a semi-manufactured product;

detecting the optoelectrical criteria of the semi-manufactured product;

providing a predetermined request with respect to a customized module;

processing the semi-manufactured product by the customized module in response to the predetermined request.

2. The method for manufacturing an optoelectronic device according to claim 1, further comprising a step of forming a plurality of chip regions on the growth wafer.

3. The method for manufacturing an optoelectronic device according to claim 2, further comprising a step of forming a p-side electrode and an n-side electrode on each of the chip regions.

4. The method for manufacturing an optoelectronic device according to claim 1, further comprising a step of comparing the optoelectrical criteria with the predetermined request.

5. The method for manufacturing an optoelectronic device according to claim 1, further comprising a step of dicing the growth wafer to form a plurality of chips.

6. The method for manufacturing an optoelectronic device according to claim 1, wherein the step of processing the semi-manufactured products by a corresponding customized module is tuning a parameter according to a pre-formed lookup table or a relation curve of the customized module.

7. The method for manufacturing an optoelectronic device according to claim 1, wherein the optoelectrical criteria comprises the current value, peak wavelength, or half-peak width.

8. The method for manufacturing optoelectronic device according to claim 1, wherein the predetermined request is selected from the group consisting of brightness, light-field, luminous wavelength, and thermal resistance.