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THROUGH SILICON VIAS USING CARBON NANOTUBES

  • US 20120202347A1
  • Filed: 02/06/2012
  • Published: 08/09/2012
  • Est. Priority Date: 02/07/2011
  • Status: Abandoned Application
First Claim
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1. A method of making through silicon vias with carbon nanotube interconnects, the method comprising:

  • placing a silicon wafer mold comprising a plurality of holes onto a carbon nanotube growth source;

    forming carbon nanotubes within at least a portion of the plurality of holes; and

    separating the carbon nanotube growth source from the silicon wafer mold so that the carbon nanotubes formed within at least a portion of the plurality of holes remain substantially within the plurality of holes, thereby forming through silicon vias.

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