HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR DEVICE ON POROUS NITRIDE SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF
First Claim
1. A method for manufacturing a semiconductor device, the method comprising:
- forming a first nitride semiconductor layer on a substrate;
forming pores in a surface of the first nitride semiconductor layer;
forming a second nitride semiconductor layer on the first nitride semiconductor layer; and
forming a semiconductor device structure on the second nitride semiconductor layer.
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Accused Products
Abstract
Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.
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Citations
17 Claims
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1. A method for manufacturing a semiconductor device, the method comprising:
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forming a first nitride semiconductor layer on a substrate; forming pores in a surface of the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer; and forming a semiconductor device structure on the second nitride semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a substrate; a first nitride semiconductor layer disposed on the substrate, wherein the first nitride semiconductor layer comprises pores formed in a surface opposite to the substrate; a second nitride semiconductor layer disposed directly on the first nitride semiconductor layer; and a semiconductor device structure disposed on the second nitride semiconductor layer. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification