UPPER ELECTRODE AND PLASMA PROCESSING APPARATUS
First Claim
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1. An upper electrode for use in a parallel plate type plasma processing apparatus, the upper electrode comprising:
- a base made of a dielectric material; and
a conductive layer formed on at least a part of a surface of the base facing a lower electrode provided in the plasma processing apparatus,wherein the conductive layer has a dense and sparse pattern such that the dense and sparse pattern at an outer portion of the surface of the base facing the lower electrode is denser than at an inner portion thereof.
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Abstract
Plasma uniformity can be improved. An upper electrode 105 for use in a parallel plate type plasma processing apparatus includes a base 105a made of a dielectric material; and a conductive layer 110 formed on at least a part of a surface of the base 105a facing a lower electrode 210 provided in the plasma processing apparatus. Further, the conductive layer 110 having a dense and sparse pattern such that the dense and sparse pattern at an outer portion of the surface of the base 105a facing the lower electrode 210 is denser than at an inner portion thereof.
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Citations
12 Claims
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1. An upper electrode for use in a parallel plate type plasma processing apparatus, the upper electrode comprising:
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a base made of a dielectric material; and a conductive layer formed on at least a part of a surface of the base facing a lower electrode provided in the plasma processing apparatus, wherein the conductive layer has a dense and sparse pattern such that the dense and sparse pattern at an outer portion of the surface of the base facing the lower electrode is denser than at an inner portion thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A parallel plate type plasma processing apparatus including an upper electrode and a lower electrode arranged to face each other,
wherein the upper electrode comprising: -
a base made of a dielectric material; and a conductive layer formed on at least a part of a surface of the base facing the lower electrode provided in the plasma processing apparatus, wherein the conductive layer has a dense and sparse pattern formed such that the dense and sparse pattern at an outer portion of the surface of the base facing the lower electrode is denser than at an inner portion thereof. - View Dependent Claims (12)
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Specification