MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING/REPRODUCING APPARATUS

• US 20120206837A1
• Filed: 09/15/2011
• Published: 08/16/2012
• Est. Priority Date: 02/14/2011
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Hara, Michiko, Fukuzawa, Hideaki, Yuasa, Hiromi, Murakami, Shuichi, FUJI, Yoshihiko
• Granted Patent: US 8,446,698 B2
• Time in Patent Office: Days
• US Class Current: 360/254
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/3906 Details related to the use of magnetic thin film layers or to their effects
• CPC Class Codes: H01F 10/3259 Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 41/325 applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetoresistive element includes a lamination body and a pair of electrodes. The lamination body includes a first magnetic layer, a second magnetic layer, and a spacer layer. The spacer layer is provided between the first magnetic layer and the second magnetic layer and includes an oxide layer. The oxide layer includes at least one element selected from the group consisting of Zn, In, Sn, and Cd, and at least one element selected from the group consisting of Fe, Co, and Ni.

Claims

1. A magnetoresistive element comprising:

a lamination body and a pair of electrodes,

the lamination body including;

a first magnetic layer;

a second magnetic layer; and

a spacer layer to be provided between the first magnetic layer and the second magnetic layer, the spacer layer including an oxide layer which includes at least one element selected from the group consisting of Zn, In, Sn, and Cd, and at least one element selected from the group consisting of Fe, Co, and Ni.

2. The element according to claim 1, wherein

the spacer layer further includes a first metal layer and a second metal layer;

and

the oxide layer is provided between the first metal layer and the second metal layer.

3. The element according to claim 1, wherein the oxide layer has a resistivity of 5×

10⁵μ

Ω

cm or less.

4. The element according to claim 1, having an areal resistance of 5Ω

μ

m², the areal resistance being a product of an area by a resistance, the area being a cross section of the element through which a current is passed in a lamination direction thereof.

5. The element according to claim 1, wherein the oxide layer includes Zn and Fe.

6. The element according to claim 2, wherein the first metal layer and the second metal layer include at least one element selected from the group consisting of Cu, Ag, Au, and Zn.

7. The element according to claim 1, wherein the oxide layer further includes at least one element selected from the group consisting of Al, B, Ga, In, C, Si, Ge, and Sn.

8. The element according to claim 1, wherein a film thickness of the oxide layer is not less than 0.5 nm and not more than 4 nm.

9. The element according to claim 2, wherein the first metal layer and the second metal layer have a film thickness of 2 nm or less.

11. A magnetic recording/reproducing apparatus comprising the magnetic head assembly according to claim 9 and a magnetic recording medium on which information is recorded using the magnetoresistive element according to claim 1.

10. A magnetic head assembly comprising:

a suspension carrying a magnetoresistive element at one end thereof; and

an actuator arm to be connected to the other end of the suspension,

wherein

the magnetoresistive element including;

a lamination body and a pair of electrodes,

the lamination body including;

a first magnetic layer;

a second magnetic layer; and

a spacer layer to be provided between the first magnetic layer and the second magnetic layer, the spacer layer including an oxide layer which includes at least one element selected from the group consisting of Zn, In, Sn, and Cd, and at least one element selected from the group consisting of Fe, Co, and Ni.