SEMICONDUCTOR DEVICE HAVING A METAL OXIDE CHANNEL

• US 20120208318A1
• Filed: 04/25/2012
• Published: 08/16/2012
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Gregory S. Herman, Peter P. Mardilovich, Randy L. Hoffman
• Original Assignee: Gregory S. Herman, Peter P. Mardilovich, Randy L. Hoffman
• Inventors: Hoffman, Randy L., Herman, Gregory S., Mardilovich, Peter P.
• Granted Patent: US 8,647,031 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y10T 408/5633 Adapted to coaxially grip round work

Abstract

A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Claims

1. A method of forming a channel, comprising:

providing at least one precursor composition that includes a plurality of precursor compounds, wherein the precursor compounds comprise indium, gallium, and zinc oxides; and

depositing the channel including the precursor composition to form a multicomponent from the precursor composition to electrically couple a drain electrode and a source electrode.

2. The method of claim 1, including depositing the precursor composition in a liquid form.

3. The method of claim 2, wherein depositing the channel includes utilizing an ink-jet deposition technique when the precursor composition is in the liquid form.

4. The method of claim 1, wherein providing the precursor composition includes providing one or more precursor compounds that include A_x, a one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein A is In, B is Ga, C is Zn, and wherein each x is independently a non-zero integer.

5. The method of claim 1, wherein providing the plurality of precursor compounds includes providing one or more compounds that include D_x, wherein D is Cd, and wherein each x is independently a non-zero integer.

6. The method of claim 1, wherein depositing the channel includes depositing one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

7. The method of claim 1, wherein depositing a channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, ion beam sputtering.

8. The method of claim 1, including providing a substrate or substrate assembly;

and

forming a semiconductor device on the substrate or substrate assembly.

9. A method of forming a channel, comprising:

providing at least one precursor composition that includes indium, gallium, and zinc oxides; and

depositing the channel including the precursor composition to form an indium-gallium-zinc metal oxide from the precursor composition to electrically couple a drain electrode and a source electrode.

10. The method of claim 9, including positioning a gate dielectric between the channel and a gate electrode.

11. The method of claim 9, wherein depositing the channel includes depositing the channel utilizing an ink-jet deposition technique.

12. The method of claim 9, including forming the source, drain, and gate electrodes from a substantially transparent material.

13. The method of claim 9, including providing a substrate or substrate assembly;

and

forming a semiconductor device including the channel on the substrate or substrate assembly.

14. A method of forming a channel, comprising:

forming a drain electrode;

forming a source electrode; and

forming a channel, configured to electrically couple the drain electrode and the source electrode, wherein the channel includes a metal oxide having one or more compounds of formula A_xB_xC_xO_x, from a precursor composition that includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x wherein A is In, B is Ga, C is Zn, O is atomic oxygen, and wherein each x is independently a non-zero integer.

15. The method of claim 14, including forming a gate electrode;

and

forming a gate dielectric, configured to separate the channel and the gate electrode.

16. The method of claim 14, including depositing the precursor composition in a liquid form.

17. The method of claim 15, including forming the source, drain, and gate electrodes from a substantially transparent material.

18. The method of claim 14, wherein having the one or more compounds of the formula A_xB_xC_xO_x includes having an atomic composition ratio of A:

B;

C, wherein A, B, and C are each in a range of about 0.017 to about 0.95.

19. The method of claim 14, wherein forming the channel includes forming one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

20. The method of claim 14, including forming a substrate or substrate assembly;

and

forming a semiconductor on the substrate or substrate assembly.