Back Contact Solar Cell with Organic Semiconductor Heterojunctions

• US 20120211063A1
• Filed: 08/23/2011
• Published: 08/23/2012
• Est. Priority Date: 03/17/2009
• Status: Abandoned Application

• Current Assignee: Sharp Laboratories of America Incorporated (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Laboratories of America Incorporated (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Lee, Jong-Jan, Schuele, Paul J.
• Application Number:
  US13/215,279
• Publication Number:
  US 20120211063A1
• Time in Patent Office: Days
• US Class Current: 136/255
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01L 31/022441 Electrode arrangements specially adapted for back-contact solar cells
• CPC Class Codes: H01L 31/0747 comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H10K 30/10 comprising heterojunctions between organic semiconductors and inorganic semiconductors
• CPC Class Codes: H10K 30/40 comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• CPC Class Codes: H10K 30/50 Photovoltaic [PV] devices
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: H10K 85/215 comprising substituents, e.g. PCBM
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A back contact solar cell with organic semiconductor heterojunctions is provided. The substrate is made from silicon lightly doped with a first dopant type having a first majority carrier. A second semiconductor layer is formed overlying the texturized substrate topside, made from hydrogenated amorphous silicon (a-Si:H) and doped with the first dopant. An antireflective coating is formed overlying the second semiconductor layer. A third semiconductor layer is formed overlying the first semiconductor substrate backside, made from intrinsic a-Si:H. First and second majority carrier type organic semiconductor layers are formed overlying the third semiconductor layer in patterns. A dielectric organic semiconductor layer is formed overlying the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, filling the spaces in the pattern. A first metal grid is connected to first organic semiconductor contact regions and a second metal grid is connected to the second organic semiconductor contact regions.

Claims

1. A method for fabricating a back contact solar cell with organic semiconductor heterojunctions, the method comprising:

providing a substrate made from a first semiconductor of silicon lightly doped with a first dopant type having a first majority carrier, the substrate having a topside and a backside;

texturing the substrate topside;

forming a second semiconductor layer overlying the first semiconductor substrate topside, made from hydrogenated amorphous silicon (a-Si;

H) and doped with the first dopant;

forming an antireflective coating overlying the second semiconductor layer;

forming a third semiconductor layer overlying the first semiconductor substrate backside, made from intrinsic a-Si;

H;

forming a first majority carrier type organic semiconductor layer overlying the third semiconductor layer inn a first pattern, where the first pattern includes channels in the first majority carrier type organic semiconductor exposing the underlying third semiconductor layer;

forming a second majority carrier type organic semiconductor layer in a second pattern overlying the third semiconductor layer in the first majority carrier type organic semiconductor pattern channels, where the second majority carrier is opposite in polarity to the first majority carrier, and where the second pattern of second majority carrier type organic semiconductor incompletely fills the channels in the first majority carrier type organic semiconductor, forming spaces between the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, exposing the third semiconductor layer;

forming a dielectric organic semiconductor layer overlying the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, filling the spaces, with openings exposing the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer that respectively form first and second organic semiconductor contact regions;

forming a first metal grid connected to first organic semiconductor contact regions; and

,

forming a second metal grid connected to second organic semiconductor contact regions.

2. The method of claim 1 wherein providing the substrate includes the first semiconductor being a material selected from a group consisting of single-crystal silicon and multi-crystalline silicon,

3. The method of claim 2 wherein providing the substrate includes first semiconductor having a thickness in a range of 2 to 400 microns, with a first dopant density in a range of 5×

10¹⁴ to 1×

10¹⁶ cm<sup>−

3</sup>.

4. The method of claim 1 wherein forming the first majority carrier type organic semiconductor layer includes using a process selected from a group consisting of screen printing and inkjet printing to deposit the first pattern as a sequence of stripes;

and,

wherein forming the second majority carrier type organic semiconductor layer includes using a process selected from the group consisting of screen printing and inkjet printing to deposit the second pattern as a sequence of stripes.

5. The method of claim 1 wherein depositing the first and second majority carrier type organic semiconductor layers includes depositing an n-type organic semiconductor selected from a group consisting of oligomeric/polymeric arylene diimides (naphthalene, perylene, etc.), [60]fullerene and higher fullerene analogues, poly[2-methoxy-5-(2′

-ethylhexyloxy)-1,4-(1-cyanovinylene)-phenylene] (CN-MEH-PPV), poly(9,9′

-dioctylfluoreneco-benzothiadiazole) (F8BT), perfluoro-terthiophenes, boron-doped polymers, and functionalized carbon nanotubes, including derivatives and combinations thereof.

6. The method of claim 1 wherein depositing the first and second majority carrier type organic semiconductor layers includes depositing a p-type organic semiconductor selected from a group consisting of polythiophenes, polyacetylenes, polypyrroles, polyanilines, poly-p-phenylenevinylenes, poly-3,4-ethylenedioxythiophenes (PEDOT) and poly-p-phenylene sulfides, polyfluorenes, polyphenylenes, polypyrenes, polyazulenes, polynaphathalenes, polycarbazoles, polyindoles, polyazepines, carbon nanotubes, and graphenes including functional derivatives and combinations thereof.

7. The method of claim 1 wherein forming the dielectric organic semiconductor layer overlying the first and second majority carrier type organic semiconductor layers includes depositing the dielectric organic semiconductor using a process selected from a group consisting of screen printing and inkjet printing.

8. The method of claim 1 wherein forming the first and second metal grids includes using a deposition process selected from a group consisting of vacuum deposition, screen printing, and inkjet printing.

9. The method of claim 1 wherein forming the first and second metal grids includes forming the first and second metal grids from a material selected from a group consisting of Al, Ag, and Ti.

10. The method of claim 1 further comprising:

prior to forming the first and second metal grids, depositing LiF overlying the first and second organic semiconductor contact regions.

11. The method of claim 1 wherein forming the first and second majority carrier type organic semiconductor layers includes forming each organic semiconductor layer with a charge carrier density in a range of 5×

10¹⁸ to 5×

10²⁰ cm<sup>−

3</sup> and a resistivity in a range of 1×

10<sup>−

3</sup> to 10 ohm-cm.

12. A back contact solar cell with organic semiconductor heterojunctions, the solar cell comprising:

a substrate made from a first semiconductor of silicon lightly doped with a first dopant type having a first majority carrier, the substrate having a textured topside and a backside;

a second semiconductor layer overlying the first semiconductor substrate textured topside, made from hydrogenated amorphous silicon (a-Si;

H) and doped with the first dopant;

an antireflective coating overlying the second semiconductor layer;

a third semiconductor layer overlying the first semiconductor substrate backside, made from intrinsic a-Si;

H;

a first majority carrier type organic semiconductor layer overlying the third semiconductor layer in a first pattern, where the first pattern includes channels in the first majority carrier type organic semiconductor exposing the underlying third semiconductor layer;

a second majority carrier type organic semiconductor layer formed in a second pattern overlying the third semiconductor layer in the first majority carrier type organic semiconductor pattern channels, where the second majority carrier is opposite in polarity to the first majority carrier, and where the second pattern of second majority carrier type organic semiconductor incompletely fills the channels in the first majority carrier type organic semiconductor, forming spaces between the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, exposing the third semiconductor layer;

a dielectric organic semiconductor layer overlying the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, filling the spaces;

openings in the dielectric organic semiconductor layer exposing the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer that respectively form first and second organic semiconductor contact regions;

a first metal grid connected to first organic semiconductor contact regions; and

, a second metal grid connected to second organic semiconductor contact regions.

13. The solar cell of claim 12 wherein the substrate first semiconductor is a material selected from a group consisting of single-crystal silicon and multi-crystalline silicon.

14. The solar cell of claim 13 wherein the substrate first semiconductor has a thickness in a range of 2 to 400 microns, with a first dopant density in a range of 5×

10¹⁴ to 1×

10 cm<sup>−

3</sup>.

15. The solar cell of claim 12 wherein the first or second majority carrier type organic semiconductor layer is an n-type organic semiconductor selected from a group consisting of oligomeric/polymeric arylene diimides (naphthalene, perylene, etc.), [60]fullerene and higher fullerene analogues, poly [2-methoxy-5-(2′

-ethylhexyloxy)-1,4-(1-cyanovinylene)-phenylene] (CN -MEH-PPV), poly(9,9′

-dioctylfluoreneco-benzothiadiazole) (F8BT), perfluoro-terthiophenes, boron-doped polymers, and functionalized carbon nanotubes, including derivatives and combinations thereof.

16. The solar cell of claim 12 wherein the first or second majority carrier type organic semiconductor layer is a p-type organic semiconductor selected from a group consisting of polythiophenes, polyacetylenes, polypyrroles, polyanilines, poly-p-phenylenevinylenes, poly-3,4-ethylenedioxythiophenes (PEDOT) and poly-p-phenylene sulfides, polyfluorenes, polyphenylenes, polypyrenes, polyazulenes, polynaphathalenes, polycarbazoles, polyindoles, polyazepines, carbon nanotubes, and graphenes including functional derivatives and combinations thereof.

17. The solar cell of claim 12 wherein the first and second metal grids are each a material selected from a group consisting of Al, Ag, and Ti.

18. The solar cell of claim 12 further comprising:

a first LiE layer interposed between the first organic semiconductor contact regions and the first metal grids; and

,

a second UT layer interposed between the second organic semiconductor contact regions and the second metal grids.

19. The solar cell of claim 12 wherein the first and second majority carrier type organic semiconductor layers each have a charge carrier density in a range of 5×

10¹⁸ to 5×

10²⁰ cm<sup>−

3</sup> and a resistivity in a range of 1×

10<sup>−

3</sup> to 10 ohm-cm.

20. A back contact solar cell with organic semiconductor heterojunctions, the solar cell comprising;

a substrate made from a first semiconductor of silicon lightly doped with a first dopant type having a first majority carrier and a first energy bandgap, the substrate having a textured topside and a backside;

a second semiconductor layer overlying the first semiconductor substrate textured topside, made from hydrogenated amorphous silicon (a-Si;

H) and doped with the first dopant;

an antireflective coating overlying the second semiconductor layer;

a third semiconductor layer overlying the first semiconductor substrate backside, made from intrinsic a-Si;

H having a second energy gap larger than the first energy gap;

a first majority carrier type organic semiconductor layer, having a third energy bandgap larger than the second energy bandgap, overlying the third semiconductor layer in a first pattern, where the first pattern includes channels in the first majority carrier type organic semiconductor exposing the underlying third semiconductor layer;

a second majority carrier type organic semiconductor layer, having a fourth energy bandgap larger than the second energy gap, formed in a second pattern overlying the third semiconductor layer in the first majority carrier type organic semiconductor pattern channels, where the second majority carrier is opposite in polarity to the first majority carrier, and where the second pattern of second majority carrier type organic semiconductor incompletely fills the channels in the first majority carrier type organic semiconductor, forming spaces between the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, exposing the third semiconductor layer;

a dielectric organic semiconductor layer overlying the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, filling the spaces;

openings in the dielectric organic semiconductor layer exposing the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer that respectively form first and second organic semiconductor contact regions;

a first metal grid connected to first organic semiconductor contact regions; and

,

a second metal grid connected to second organic semiconductor contact regions.