HIGH DOSE IMPLANTATION STRIP (HDIS) IN H2 BASE CHEMISTRY

• US 20120211473A1
• Filed: 05/02/2012
• Published: 08/23/2012
• Est. Priority Date: 12/13/2004
• Status: Active Grant

• Current Assignee: David Cheung, Haruhiro Harry Goto
• Original Assignee: David Cheung, Haruhiro Harry Goto
• Inventors: Goto, Haruhiro Harry, Cheung, David
• Granted Patent: US 8,641,862 B2
• Time in Patent Office: Days
• US Class Current: 219/121.59
• CPC Class Codes: C01B 3/00 Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it separation of gases by physical means B01D; Purification of hydrogen production of water gas or synthesis gas from solid carbonaceous material C10J; purifying or modifying the chemical compositions of combustible technical gases containing carbon monoxide C10K
• CPC Class Codes: C01B 7/20 Fluorine
• CPC Class Codes: H01J 2237/3342 Resist stripping
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01L 21/02041 Cleaning
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence

Abstract

Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.

Claims

1. An apparatus for removing material from a work piece surface comprising:

a reaction chamber comprising

a plasma source,

a gas inlet for introducing a gas mixture comprising elemental hydrogen into the plasma source,

a gas inlet for introducing an inert gas downstream of the plasma source and upstream of the work piece,

a showerhead positioned downstream of the gas inlet, and

a work piece support downstream of the showerhead, said work piece support comprising a pedestal and temperature-controlling mechanism to control a temperature of a work piece supported on the work piece support; and

,

a controller for executing a set of instructions, said set of instruction comprising instructions to

introduce a gas comprising hydrogen, a weak oxidizing agent, and a fluorine containing gas into a plasma source,

generate a plasma from the gas introduced into the plasma source, and

introduce an inert gas downstream of the plasma source and upstream of the work piece.

2. The apparatus of claim 1, wherein the instructions further comprise instructions to

repeat the introduce a gas, generate a plasma, and introduce an inert gas instructions using different flow rates.

3. The apparatus of claim 1, wherein the reaction chamber include multiple stations, each station comprising a plasma source, a plurality of gas inlets, a showerhead, and a work piece support.