×

THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

  • US 20120211745A1
  • Filed: 03/02/2012
  • Published: 08/23/2012
  • Est. Priority Date: 09/04/2009
  • Status: Active Grant
First Claim
Patent Images

1. A thin film transistor comprising:

  • a gate electrode;

    a semiconductor layer including an oxide including at least one of gallium and zinc, and indium;

    a gate insulating film provided between the gate electrode and the semiconductor layer; and

    a source electrode and a drain electrode electrically connected to the semiconductor layer and spaced from each other,the semiconductor layer including a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and having periodicity in arrangement of atoms.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×