LED Packaging Structure and Fabricating Method Thereof
First Claim
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1. A light emitting diode packaging structure, comprising:
- a base;
a LED chip disposed on the base and electrically connected to the base, the LED chip having a substrate and at least a semiconductor layer formed on the substrate; and
a gel-blocking structure disposed on the substrate of the LED chip and surrounding the semiconductor layer, the gel-blocking structure including a first metal layer and a second metal layer formed on the first metal layer.
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Abstract
A light emitting diode (LED) packaging structure includes a base, a LED chip, a gel-blocking structure and a phosphor layer. The LED chip disposed on the base and electrically connected to the base. The LED chip having a substrate and a semiconductor layer formed on the substrate. The gel-blocking structure is disposed on the substrate of the LED chip and surrounding the semiconductor layer. The phosphor layer is filled within a space defined by the gel-blocking structure, the substrate and the semiconductor layer. The present invention also discloses a fabricating method of the LED packaging structure.
16 Citations
20 Claims
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1. A light emitting diode packaging structure, comprising:
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a base; a LED chip disposed on the base and electrically connected to the base, the LED chip having a substrate and at least a semiconductor layer formed on the substrate; and a gel-blocking structure disposed on the substrate of the LED chip and surrounding the semiconductor layer, the gel-blocking structure including a first metal layer and a second metal layer formed on the first metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a light emitting diode packaging structure, comprising:
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providing a base; disposing a LED chip on the base and electrically connecting the LED chip to the base, the LED chip including a substrate and a semiconductor layer formed on the substrate; and disposing a gel-blocking structure on the substrate of the LED chip and surrounding the semiconductor layer by forming a first metal layer by evaporation deposition and forming a second metal layer on the first metal layer by electroplating. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification