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SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT ELEMENTS

  • US 20120211837A1
  • Filed: 02/14/2012
  • Published: 08/23/2012
  • Est. Priority Date: 02/17/2011
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a contact element laterally adjacent to a gate electrode structure so as to connect to one of a drain region and source region formed in an active region of a semiconductor device, said gate electrode structure comprising a placeholder electrode material covered by a dielectric cap layer; and

    replacing said placeholder electrode material at least with a metal-containing electrode material in the presence of said contact element.

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