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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

  • US 20120213000A1
  • Filed: 02/09/2012
  • Published: 08/23/2012
  • Est. Priority Date: 02/17/2011
  • Status: Active Grant
First Claim
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1. A semiconductor memory device comprising a gain cell, the gain cell comprising:

  • a read bit line formed in or over a substrate;

    a projecting insulator formed over the substrate;

    a write word line that is formed on a side surface of the projecting insulator and faces with a gate insulator interposed therebetween;

    a semiconductor interposed between the write word line and the side surface of the projecting insulator;

    an electrode provided over a top of the projecting insulator; and

    a write bit line that is provided over the projecting insulator and is electrically connected to the electrode.

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