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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

  • US 20120214276A1
  • Filed: 04/25/2012
  • Published: 08/23/2012
  • Est. Priority Date: 02/06/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • forming a gate electrode layer over a substrate having an insulating surface;

    forming a gate insulating layer over the gate electrode layer;

    forming a first oxide semiconductor layer including In, Sn, and SiOX over the gate insulating layer by a sputtering method using a first oxide semiconductor target including In, Sn, Si and O at 5 wt % or higher and 50 wt % or lower; and

    forming a source region, a drain region, and a pixel electrode over the first oxide semiconductor layer by a sputtering method using a second oxide semiconductor target including In, Sn, Si and O,wherein the source region, the drain region, and the pixel electrode are formed from a second oxide semiconductor layer including In, Sn and O.

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