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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

  • US 20120217540A1
  • Filed: 05/01/2012
  • Published: 08/30/2012
  • Est. Priority Date: 09/30/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a source metallization;

    a first field-effect structure including a source region of a first conductivity type, the source region being electrically connected to the source metallization;

    a body region of a second conductivity type adjacent to the source region;

    a first gate electrode and a first insulating region arranged at least between the first gate electrode and the body region, the first gate electrode, the first insulating region and the body region forming a first capacitance, the first capacitance having a first capacitance per unit area;

    a second field-effect structure including a source region of the first conductivity type;

    a body region of the second conductivity type adjacent to the source region;

    an electrode structure and a second insulating region which is, in a first vertical cross-section, arranged at least between the electrode structure and the body region, the source region and the electrode structure being electrically connected to the source metallization;

    the electrode structure, the second insulating region and the body region forming a second capacitance, the second capacitance having a second capacitance per unit area; and

    the second capacitance per unit area being larger than the first capacitance per unit area.

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