DISPLAY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
First Claim
1. A display device, comprising:
- a substrate;
a display element provided on said substrate;
a thin film transistor provided on said substrate, and having a first semiconductor oxide film including a source region and a drain region on both sides of a channel region, said first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of said channel region in at least parts of said source region and said drain region in a depth direction from upper surfaces of said source region and said drain region;
a second semiconductor oxide film provided in an area, of said substrate, other than the area in which said thin film transistor is provided, and having a second low resistance area whose oxygen concentration is lower than that of said channel region in at least a part in the depth direction from the upper surface; and
a high resistance film covering said thin film transistor, said second semiconductor oxide film, and said substrate, made of a metallic oxide, having a first translucent area in an area contacting said first low resistance area, and having a second translucent area in an area contacting said second low resistance area.
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Accused Products
Abstract
A display device includes a substrate; a display element; a thin film transistor, and having a first semiconductor oxide film including a source region and a drain region, the first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of the channel region in parts of the source region and the drain region in a depth direction from upper surfaces thereof; a second semiconductor oxide film having a second low resistance area whose oxygen concentration is lower than that of the channel region in a part in the depth direction from the upper surface; and a high resistance film covering the thin film transistor, the second semiconductor oxide film, and the substrate, made of a metallic oxide, having a first translucent area in an area contacting the first low resistance area, and having a second translucent area.
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Citations
7 Claims
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1. A display device, comprising:
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a substrate; a display element provided on said substrate; a thin film transistor provided on said substrate, and having a first semiconductor oxide film including a source region and a drain region on both sides of a channel region, said first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of said channel region in at least parts of said source region and said drain region in a depth direction from upper surfaces of said source region and said drain region; a second semiconductor oxide film provided in an area, of said substrate, other than the area in which said thin film transistor is provided, and having a second low resistance area whose oxygen concentration is lower than that of said channel region in at least a part in the depth direction from the upper surface; and a high resistance film covering said thin film transistor, said second semiconductor oxide film, and said substrate, made of a metallic oxide, having a first translucent area in an area contacting said first low resistance area, and having a second translucent area in an area contacting said second low resistance area. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An electronic apparatus, comprising:
a display device including a substrate, a display element provided on said substrate, a thin film transistor provided on said substrate, and having a first semiconductor oxide film including a source region and a drain region on both sides of a channel region, said first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of said channel region in at least parts of said source region and said drain region in a depth direction from upper surfaces of said source region and said drain region, a second semiconductor oxide film provided in an area, of said substrate, other than the area in which said thin film transistor is provided, and having a second low resistance area whose oxygen concentration is lower than that of said channel region in at least a part in the depth direction from the upper surface, and a high resistance film covering said thin film transistor, said second semiconductor oxide film, and said substrate, made of a metallic oxide, having a first translucent area in an area contacting said first low resistance area, and having a second translucent area in an area contacting said second low resistance area.
Specification