THIN-FILM COATINGS, ELECTRO-OPTIC ELEMENTS AND ASSEMBLIES INCORPORATING THESE ELEMENTS

• US 20120218618A1
• Filed: 03/29/2012
• Published: 08/30/2012
• Est. Priority Date: 03/03/2006
• Status: Active Grant

• Current Assignee: Gentex Corporation
• Original Assignee: Gentex Corporation
• Inventors: Tonar, William L., Anderson, John S., Forgette, Jeffrey A., Neuman, George A., Dozeman, Gary J., Cammenga, David J., Luten, Henry A., Poe, G. Bruce, Brummel, Nelson F., Perron, Lansen M.
• Granted Patent: US 8,547,622 B2
• Time in Patent Office: Days
• US Class Current: 359/245
• CPC Class Codes: B60R 1/084 using a removable filtering or hiding screen associated with windows or windscreens B60J3/00
• CPC Class Codes: G02B 5/0808 having a single reflecting layer G02B5/0883, G02B5/0891 take precedence
• CPC Class Codes: G02F 1/0018 Electro-optical materials
• CPC Class Codes: G02F 1/155 Electrodes
• CPC Class Codes: G02F 1/157 Structural association of cells with optical devices, e.g. reflectors or illuminating devices
• CPC Class Codes: Y10T 428/24355 Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
• CPC Class Codes: Y10T 428/2495 Thickness [relative or absolute]

Abstract

Electro-optic elements are becoming commonplace in a number of vehicular and architectural applications. Various electro-optic element configurations provide variable transmittance and or variable reflectance for windows and mirrors. The present invention relates to various thin-film coatings, electro-optic elements and assemblies incorporating these elements.

Claims

1. A transflective electro-optic (EO) mirror element for use in a vehicular rearview assembly, said transflective EO mirror element comprising

a first glass substrate having first and second surfaces, the first surface corresponding to a front of said rearview assembly, the second surface carrying a transparent electrically-conductive layer thereon;

a second glass substrate having third and fourth surfaces and disposed in a spaced-apart and parallel relationship with respect to the first substrate such as to form a gap between the second and third surfaces opposing one another, the third surface having a thin-film stack thereon that includes a layer of transparent conductive oxide (TCO) carrying a layer of high-reflectance material, wherein a value of sheet resistance of said thin-film stack is less than 6.8 ohms/square, a value of absorbance of said first substrate with the thin-film stack thereon is greater than 12%, a value of reflectance of said first substrate with the thin-film stack thereon is greater than 63%, and a value of transmittance of said first substrate with the thin-film stack thereon is greater than 2.5%;

and

an EO medium in said gap;

wherein values of reflectance, absorbance, transmittance, and color characteristics are measured in light from a D₆₅ standard illuminant, and

wherein the high-reflectance material includes a material that defines higher reflectance relative to a material, of the thin-film stack, a contribution of which to a sheet resistance of the thin-film stack is the largest.

2. A transflective EO mirror element according to claim 1, wherein the layer of TCO includes one or more of ITO, F:

SnO2, Sb;

SnO2, Doped ZnO, and IZO.

3. A transflective EO mirror element according to claim 1, wherein said layer of TCO has optical thickness greater than ¾

of a wave.

4. A transflective EO mirror element according to claim 1, wherein said layer of TCO has optical thickness greater than 5/4 of a wave.

5. A transflective EO mirror element according to claim 1, wherein said high-reflectance material includes at least one of silver, a silver alloy, chromium, rhodium, ruthenium, rhenium, palladium, platinum, iridium, silicon, a semiconductor material, molybdenum, nickel, nickel-chrome, gold, a gold alloy, and combinations thereof.

6. A transflective EO mirror element according to claim 5, wherein the semiconductor material includes at least one of SiGe, InSb, InP, InGa, InAlAs, InAl, InGaAs, HgTe, Ge, GaSb, AlSb, GaAs and AlGaAs.

7. A transflective EO mirror element according to claim 1, wherein said thin-film stack includes a third layer adjoined to the layer of high-reflectance material.

8. A transflective EO mirror element according to claim 7, wherein the third layer is disposed under the layer of high-reflectance material and includes at least one of chromium, stainless steel, nickel, Inconel, indium, palladium, osmium, tungsten, rhenium, iridium, molybdenum, rhodium, ruthenium, silicon, tantalum, titanium, copper, a platinum group metal, an oxide, and metal oxide.

9. A transflective EO mirror element according to claim 7, wherein the layer of high reflectance material includes silicon and the third layer includes ruthenium.

10. A transflective EO mirror element according to claim 6 having a transmittance spectrum, within a visible and near infrared spectral regions, wherein the highest transmittance value is at least 1.5 times higher than the lowest transmittance value.

11. A transflective EO mirror element according to claim 6, wherein light transmitted through said second substrate and said thin-film stack is characterized by a C* value of at least 8.

12. A transflective EO mirror element according to claim 1, wherein a value of transmittance of said first substrate carrying said thin-film stack is greater than about 5 percent.

13. A transflective EO mirror element according to claim 1, wherein a value of transmittance of said second substrate with said thin-film stack thereon is greater than about 10 percent.

14. A transflective EO mirror element according to claim 1, wherein a value of reflectance of said second substrate with said thin-film stack thereon is greater than about 70 percent.

15. A transflective EO mirror element according to claim 2, wherein the value of sheet resistance of said thin-film stack is less than 4 Ohms per square.

16. A transflective EO mirror element according to claim 1, wherein said thin-film stack includes a third layer disposed on top of the layer of high-reflectance material, the high-reflectance material including silver or silver alloy, and the third layer including at least one of rhodium, ruthenium, palladium, platinum, nickel, tungsten, tantalum, stainless steel, gold, molybdenum, and alloys thereof.

17. A transflective EO mirror element according to claim 9, wherein said third layer is disposed over the layer of high-reflectance material, the high-reflectance material including silver or silver alloy, the third layer includes a chromium-ruthenium bi-layer.

18. A transflective EO mirror element according to claim 1, wherein the thin-film stack further comprises a layer of transparent conductive oxide material disposed in contact with the EO medium.

19. A transflective EO mirror element according to claim 18, wherein the TCO includes indium-tin oxide.

20. A transflective EO mirror element according to claim 1, wherein a first reflectance value of said second substrate with the thin-film stack thereon measured light incident onto the third surface towards the fourth surface is higher than a second reflectance value of said second substrate with the thin-film stack measured in light incident from the fourth surface towards the third surface.

21. A transflective EO mirror element according to claim 1 characterized by reflectance of greater than 45%.

22. A transflective EO mirror element according to claim 1 characterized by reflectance of greater than 55%.

23. A transflective EO mirror element according to claim 1 characterized by reflectance of greater than 60%.

24. A transflective EO mirror element according to claim 1 characterized, in reflection, by neutral color.

25. A transflective EO mirror element according to claim 1, wherein an auxiliary layer is disposed over the layer of high-reflectance material, at least one of the layer of high-reflective material and the auxiliary layer including an opening defining a transflective zone of the transflective EO mirror element in an area of the opening and an opaque zone in an area adjoining the area of the opening.

26. A transflective EO mirror element according to claim 25, wherein at least one of reflectance value and color of light reflected by the transflective zone of the transflective EO mirror element substantially matches that of light reflected by the opaque zone of the transflective EO element.

27. A transflective EO mirror element according to claim 5, wherein said thin-film stack includes a fourth layer disposed under the layer of high-reflectance material, the high-reflectance material including silver or silver alloy and the fourth layer including chromium, and the transflective EO mirror element is characterized by reflectance of greater than 55 percent and transmittance of about 21 percent.

28. A transflective EO mirror element according to claim 1, wherein a peak-to-valley roughness of a surface of the layer of high-reflectance material is less than 150 Angstroms.

29. A transflective EO mirror element according to claim 1, wherein a peak-to-valley roughness of a surface of the layer of high-reflectance material is less than 50 Angstroms.

30. An electro-optic (EO) mirror element for use in a vehicular rearview assembly, said transflective EO mirror element comprising

a first glass substrate having first and second surfaces, the first surface corresponding to a front of the rearview assembly, the second surface having a layer of transparent conductive oxide (TCO) thereon;

a second glass substrate having third and fourth surfaces and disposed in spaced-apart and parallel relationship with respect to the first substrate to form a gap between the second and third surface that oppose one another, the third surface carrying a thin-film stack that includes (i) a layer of TCO having a sheet resistance of less than 6.8 ohms per square and a surface roughness of less than 200 Angstroms, and (i) a layer of high reflectance material on top of the layer of TCO, and

an EO medium in the gap

wherein the high-reflectance material includes a material that defines higher reflectance as compared to that of the layer of TCO, and

wherein the contribution of the layer of TCO to a sheet resistance of the thin-film stack larger than that of any other layer of the thin-film stack.

31. An EO mirror element according to claim 30, wherein said high-reflectance material includes at least one of silver, a silver alloy, chromium, rhodium, ruthenium, rhenium, palladium, platinum, iridium, silicon, a semiconductor material, molybdenum, nickel, nickel-chrome, gold, a gold alloy, and combinations thereof.

32. A transflective EO mirror element according to claim 31, wherein the semiconductor material includes at least one of SiGe, InSb, InP, InGa, InAlAs, InAl, InGaAs, HgTe, Ge, GaSb, AlSb, GaAs and AlGaAs.

33. A transflective EO mirror element according to claim 30, wherein said thin-film stack includes a third layer adjoined to the layer of high-reflectance material.

34. A transflective EO mirror element according to claim 33, wherein the third layer is disposed under the layer of high-reflectance material and includes at least one of chromium, stainless steel, nickel, Inconel, indium, palladium, osmium, tungsten, rhenium, iridium, molybdenum, rhodium, ruthenium, silicon, tantalum, titanium, copper, a platinum group metal, an oxide, and metal oxide.

35. A transflective EO mirror element according to claim 33, wherein said third layer is disposed over the layer of high-reflectance material, the high-reflectance material including silver or silver alloy, the third layer including a chromium-ruthenium bi-layer.

36. An EO mirror element according to claim 30, wherein the layer of high-reflectance material includes a layer of ruthenium.

37. An EO mirror element according to claim 36 wherein the layer of high-reflectance material includes silicon.

38. An EO mirror element according to claim 30, wherein a value of absorbance, of said second substrate with the thin-film stack thereon, measured in light from a D₆₅ standard illuminant is greater than 12%.

39. An EO mirror element according to claim 30 wherein a value of reflectance, of said second substrate with the thin-film stack thereon, measured in light from a D₆₅ standard illuminant is greater than about 63%.

40. An EO mirror element according to claim 39, characterized by a value of reflectance, measured in light from a D₆₅ standard illuminant, greater than about 50%.

41. An EO mirror element according to claim 30, wherein a value of transmittance, of said second substrate with the thin-film stack thereon, measured in light from a D₆₅ standard illuminant is greater than 2.5%.

42. An EO mirror element according to claim 30, wherein a value of transmittance of said second substrate with said thin-film stack thereon is greater than about 10 percent.

43. An EO mirror element according to claim 30, wherein the layer of TCO has a thickness of odd number of quarter waves.

44. An EO mirror element according to claim 30, wherein the layer of TCO includes one or more of ITO, F:

SnO2, Sb;

SnO2, Doped ZnO, and IZO.

45. An EO mirror element according to claim 30, characterized by reflectance, measured in light from a D₆₅ standard illuminant, of greater than 55%.

46. A transflective EO mirror element according to claim 30, characterized by reflectance, measured in light from a D₆₅ standard illuminant, of greater than 60%.

52. A transflective EO mirror element according to claim 33, wherein said third layer is disposed over the layer of high-reflectance material, the high-reflectance material including silver or silver alloy, the third layer including a chromium-ruthenium bi-layer.

54. An EO mirror element according to claim 52 wherein the high-reflectance coating includes silicon.

47. An electro-optic (EO) mirror element for use in a vehicular rearview assembly, said mirror element comprising

a first glass substrate having first and second surfaces;

a second glass substrate having third and fourth surfaces and disposed in spaced-apart and parallel relationship with respect to the first substrate with the third and second surfaces being opposite to each other, the second substrate carrying a thin film stack on a surface thereof, the thin-film stack including a layer of transparent conductive oxide (TCO) carrying a high-reflectance coating, wherein a value of sheet resistance of said thin-films stack is less than 6.8 Ohms per square, and wherein a transmittance value of said first substrate with the thin-film stack thereon is greater than 2.5%; and

an EO medium between the second and third surfaces and,

wherein values of reflectance, absorbance, and transmittance are measured in light from a D₆₅ standard illuminant,

wherein the high-reflectance material includes a material that defines higher reflectance relative to a material, of the thin-film stack, a contribution of which to a sheet resistance of the thin-film stack is the largest,

wherein a value of reflectance of said mirror element in light incident onto the fourth surface towards the third surface smaller than a value of reflectance of said mirror element in light incident onto the first surface towards the second surface.

48. An EO mirror element according to claim 47, wherein said high-reflectance coating includes at least one of silver, a silver alloy, chromium, rhodium, ruthenium, rhenium, palladium, platinum, iridium, silicon, a semiconductor material, molybdenum, nickel, nickel-chrome, gold, a gold alloy, and combinations thereof.

49. A transflective EO mirror element according to claim 48, wherein the semiconductor material includes at least one of SiGe, InSb, InP, InGa, InAlAs, InAl, InGaAs, HgTe, Ge, GaSb, AlSb, GaAs and AlGaAs.

50. A transflective EO mirror element according to claim 47, wherein said thin-film stack includes a third layer adjoined to the high-reflectance coating.

51. A transflective EO mirror element according to claim 50, wherein the third layer is disposed under the layer of high-reflectance material and includes at least one of chromium, stainless steel, nickel, Inconel, indium, palladium, osmium, tungsten, rhenium, iridium, molybdenum, rhodium, ruthenium, silicon, tantalum, titanium, copper, a platinum group metal, an oxide, and metal oxide.

53. An EO mirror element according to claim 47, wherein the high-reflectance coating includes a layer of ruthenium.

55. An EO mirror element according to claim 47, wherein a value of absorbance, of said second substrate with the thin-film stack thereon is greater than 12%.

56. An EO mirror element according to claim 47 wherein a value of reflectance, of said second substrate with the thin-film stack thereon is greater than about 63%.

57. An EO mirror element according to claim 56, characterized by a value of reflectance greater than about 50%.

58. An EO mirror element according to claim 47, wherein a value of transmittance, of said second substrate with the thin-film stack thereon, is greater than 2.5%.

59. An EO mirror element according to claim 47, wherein a value of transmittance of said second substrate with said thin-film stack thereon is greater than about 10 percent.

60. An EO mirror element according to claim 47, wherein the layer of TCO has a thickness of odd number of quarter waves.

61. An EO mirror element according to claim 47, wherein the layer of TCO includes one or more of ITO, F:

SnO2, Sb;

SnO2, Doped ZnO, and IZO.

62. An EO mirror element according to claim 47, characterized by reflectance of greater than 55%.

63. A transflective EO mirror element according to claim 47, characterized by reflectance of greater than 60%.