×

COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20120220089A1
  • Filed: 12/14/2011
  • Published: 08/30/2012
  • Est. Priority Date: 02/25/2011
  • Status: Active Grant
First Claim
Patent Images

1. A compound semiconductor device comprising:

  • a structure of stacked compound semiconductors, in which a first recess and a second recess are formed;

    a gate electrode formed in the first recess through a gate insulation film; and

    a field plate electrode which is formed in the second recess and comes in Schottky contact with the structure of the stacked compound semiconductors.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×