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METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR

  • US 20120220092A1
  • Filed: 04/30/2012
  • Published: 08/30/2012
  • Est. Priority Date: 10/21/2009
  • Status: Abandoned Application
First Claim
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1. A method comprising:

  • forming a plurality of first trenches in a semiconductor substrate to a first depth;

    forming a plurality of second trenches in said semiconductor substrate to a second depth;

    wherein said plurality of first trenches are parallel with said plurality of second trenches, andwherein further trenches of said plurality of first trenches alternate with and are adjacent to trenches of said plurality of second trenches.

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