METHOD FOR MANUFACTURING TRANSISTOR
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor layer including a first region and a second region, the first region including a channel region;
a gate insulating layer adjacent to the oxide semiconductor layer;
a gate electrode adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween; and
a conductive layer in contact with the second region of the oxide semiconductor layer,wherein the first region includes hydrogen at a lower concentration than the second region, andwherein the first region includes oxygen at a higher concentration than the second region.
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Abstract
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.
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Citations
16 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer including a first region and a second region, the first region including a channel region; a gate insulating layer adjacent to the oxide semiconductor layer; a gate electrode adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween; and a conductive layer in contact with the second region of the oxide semiconductor layer, wherein the first region includes hydrogen at a lower concentration than the second region, and wherein the first region includes oxygen at a higher concentration than the second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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an oxide semiconductor layer including a first region and a second region, the first region including a channel region; a gate insulating layer adjacent to the oxide semiconductor layer; a gate electrode adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween; a conductive layer in contact with the second region of the oxide semiconductor layer; and a pixel electrode in electrical contact with the conductive layer, wherein the first region includes hydrogen at a lower concentration than the second region, and wherein the first region includes oxygen at a higher concentration than the second region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification