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SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20120223355A1
  • Filed: 08/31/2011
  • Published: 09/06/2012
  • Est. Priority Date: 03/03/2011
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

    a first electrode layer provided on the first semiconductor layer side of the structure, the first electrode layer being made of metal and containing a portion contacting the first semiconductor layer.a second electrode layer provided on the second semiconductor layer side of the structure, the second electrode layer including a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer, and a plurality of openings piercing the metal portion, each of the openings viewed in the direction having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

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