Method for producing beta-sialon phosphor

• US 20120223448A1
• Filed: 11/01/2010
• Published: 09/06/2012
• Est. Priority Date: 11/13/2009
• Status: Active Grant

• Current Assignee: Denki Kagaku Kogyo Kabushiki Kaisha (TDK Corporation)
• Original Assignee: Denki Kagaku Kogyo Kabushiki Kaisha (TDK Corporation)
• Inventors: Nomiyama, Tomohiro, Yamada, Suzuya, Hashimoto, Hisayuki
• Granted Patent: US 8,945,461 B2
• Time in Patent Office: Days
• US Class Current: 264/1.21
• CPC Class Codes: C01B 21/0826 Silicon aluminium oxynitrides, i.e. sialons
• CPC Class Codes: C01P 2002/52 containing elements as dopants
• CPC Class Codes: C01P 2002/54 one element only
• CPC Class Codes: C01P 2002/84 by UV- or VIS- data
• CPC Class Codes: C01P 2004/61 Micrometer sized, i.e. from 1-100 micrometer
• CPC Class Codes: C04B 2111/807 Luminescent or fluorescent materials
• CPC Class Codes: C04B 2235/3224 Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
• CPC Class Codes: C04B 2235/3865 Aluminium nitrides
• CPC Class Codes: C04B 2235/3878 Alpha silicon nitrides
• CPC Class Codes: C04B 2235/3895 Non-oxides with a defined oxygen content, e.g. SiOC, TiON
• CPC Class Codes: C04B 2235/428 Silicon
• CPC Class Codes: C04B 2235/5436 micrometer sized, i.e. from 1 to 100 micron
• CPC Class Codes: C04B 2235/6562 Heating rate
• CPC Class Codes: C04B 2235/658 Atmosphere during thermal treatment
• CPC Class Codes: C04B 2235/6581 Total pressure below 1 atmosphere, e.g. vacuum
• CPC Class Codes: C04B 2235/662 Annealing after sintering
• CPC Class Codes: C04B 2235/767 Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
• CPC Class Codes: C04B 2235/9646 Optical properties
• CPC Class Codes: C04B 35/597 based on silicon oxynitride, e.g. SIALONS
• CPC Class Codes: C04B 35/6455 Hot isostatic pressing
• CPC Class Codes: C04B 41/0072 : Heat treatment
• CPC Class Codes: C04B 41/009 : characterised by the material treated
• CPC Class Codes: C04B 41/5016 : Acids
• CPC Class Codes: C04B 41/85 : with inorganic materials
• CPC Class Codes: C09K 11/0883 : Arsenides; Nitrides; Phosphides
• CPC Class Codes: C09K 11/77348 : Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides

Abstract

Provided is a production method of a β-sialon phosphor that europium ions are solid-solved in β-sialon, including a mixing process for mixing raw materials of the β-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the β-sialon phosphor; a HIP treatment process in which the β-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the β-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the β-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a β-sialon phosphor, a β-sialon phosphor excellent in luminescence intensity is obtained.

Claims

1. A production method of a β

-sialon phosphor that europium ions are solid-solved in β

-sialon, comprising;

a mixing process for mixing raw materials of the β

-sialon phosphor;

a burning process for burning the raw materials after the mixing process to form the β

-sialon phosphor;

a HIP treatment process in which the β

-sialon phosphor after the burning process is subjected to a HIP (Hot Isostatic Pressing) treatment;

an annealing process in which the β

-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and

an acid treatment process in which the β

-sialon phosphor after the annealing process is subjected to an acid treatment.

2. The production method of a β

-sialon phosphor of claim 1, wherein the HIP treatment process is a process that the β

-sialon phosphor is placed under a nitrogen atmosphere at 1900.degree C. to 2500.degree C., 70 MPa to 200 MPa.

3. The production method of a β

-sialon phosphor of claim 1, wherein the annealing process is a process that the β

-sialon phosphor is placed under an inactive gas atmosphere comprising mainly of a gas other than nitrogen at 1350.degree C. to 1650.degree C., or a process that it is placed in vacuum at 1200.degree C. to 1550.degree C.

4. The production method of a β

-sialon phosphor of claim 1, wherein the acid treatment process is a process that the β

-sialon phosphor is soaked in a mixed acid of hydrofluoric acid and nitric acid, or ammonium hydrofluoride.

5. The production method of a β

-sialon phosphor of claim 1, wherein the mixing process is a process that a mixed powder of metal silicon, aluminum nitride and europium oxide as raw materials is subjected to direct nitridation of silicon.

6. The production method of a β

-sialon phosphor of claim 1, wherein the mixing process is a process that silicon nitride, aluminum nitride and europium oxide are mixed as raw materials.

7. The production method of a β

-sialon phosphor of claim 2, wherein the annealing process is a process that the β

-sialon phosphor is placed under an inactive gas atmosphere comprising mainly of a gas other than nitrogen at 1350.degree C. to 1650.degree C., or a process that it is placed in vacuum at 1200.degree C. to 1550.degree C.

8. The production method of a β

-sialon phosphor of claim 2, wherein the acid treatment process is a process that the β

-sialon phosphor is soaked in a mixed acid of hydrofluoric acid and nitric acid, or ammonium hydrofluoride.

9. The production method of a β

-sialon phosphor of claim 3, wherein the acid treatment process is a process that the β

-sialon phosphor is soaked in a mixed acid of hydrofluoric acid and nitric acid, or ammonium hydrofluoride.

10. The production method of a β

-sialon phosphor of claim 2, wherein the mixing process is a process that a mixed powder of metal silicon, aluminum nitride and europium oxide as raw materials is subjected to direct nitridation of silicon.

11. The production method of a β

-sialon phosphor of claim 3, wherein the mixing process is a process that a mixed powder of metal silicon, aluminum nitride and europium oxide as raw materials is subjected to direct nitridation of silicon.

12. The production method of a β

-sialon phosphor of claim 4, wherein the mixing process is a process that a mixed powder of metal silicon, aluminum nitride and europium oxide as raw materials is subjected to direct nitridation of silicon.

13. The production method of a β

-sialon phosphor of claim 2, wherein the mixing process is a process that silicon nitride, aluminum nitride and europium oxide are mixed as raw materials.

14. The production method of a β

-sialon phosphor of claim 3, wherein the mixing process is a process that silicon nitride, aluminum nitride and europium oxide are mixed as raw materials.

15. The production method of a β

-sialon phosphor of claim 4, wherein the mixing process is a process that silicon nitride, aluminum nitride and europium oxide are mixed as raw materials.