Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices

• US 20120224406A1
• Filed: 05/15/2012
• Published: 09/06/2012
• Est. Priority Date: 08/20/2010
• Status: Active Grant

• Current Assignee: Attopsemi Technology Co., Ltd.
• Original Assignee: Shine C. Chung
• Inventors: Chung, Shine C.
• Granted Patent: US 8,488,359 B2
• Time in Patent Office: Days
• US Class Current: 365/96
• CPC Class Codes: G11C 17/06 using diode elements G11C17/14 takes precedence
• CPC Class Codes: G11C 17/14 in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 61/20 comprising components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10B 63/20 comprising selection components having two electrodes, e.g. diodes
• CPC Class Codes: H10B 63/30 comprising selection components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10B 63/32 of the bipolar type
• CPC Class Codes: H10B 63/80 Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 70/20 Multistable switching devices, e.g. memristors
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/245 the species being metal cations, e.g. programmable metallization cells
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, such as electrical fuse, contact/via fuse, contact/via anti-fuse, or gate-oxide breakdown anti-fuse, etc. The OTP device has at least one OTP element coupled to at least one diode in a memory cell. The diode can be constructed by P+ and N+ active regions in a CMOS N well, or on an isolated active region as the P and N terminals of the diode. The isolation between P+ and the N+ active regions of the diode in a cell or between cells can be provided by dummy MOS gate, SBL, or STI/LOCOS isolations. The OTP element can be polysilicon, silicided polysilicon, silicide, metal, metal alloy, local interconnect, thermally isolated active region, CMOS gate, or combination thereof.

Claims

1. A One-Time Programmable (OTP) memory, comprising:

a plurality of OTP cells, at least one of the cells comprising;

an OTP element including at least an interconnect coupled to a first supply voltage line;

a diode including at least a first active region and a second active region isolated from the first active region, where the first active region having a first type of dopant and a second active region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, both the first and second active regions residing in a common CMOS well or on an isolated substrate, the first active region coupled to the OTP element and the second active region coupled to a second supply voltage line,

wherein the first and second active regions being fabricated from sources or drains of CMOS devices, and

wherein the OTP element is configured to be programmable by applying voltages to the first and the second supply voltage lines to thereby change its logic state.

2. An OTP memory as recited in claim 1, wherein the interconnect is constructed from a CMOS gate.

3. An OTP memory as recited in claim 1, wherein the interconnect includes at least one of polysilicon, silicided polysilicon, silicide, local interconnect, thermally isolated active region, metal, metal alloy, or combination thereof.

4. An OTP memory as recited in claim 1, wherein the interconnect has a substantially rectangular shape.

5. An OTP memory as recited in claim 1, wherein the interconnect has a length-to-width ratio of between 0.5 and 8 in its body.

6. An OTP memory as recited in claim 1, wherein the interconnect has a first end and a second end, and wherein the first or the second end of the interconnect has no more than two contacts.

7. An OTP memory as recited in claim 1, wherein the interconnect is coupled to the first active region of the diode through a metal layer at a single shared contact.

8. An OTP memory as recited in claim 7, wherein the shared contact is larger than at least one contact outside of the OTP memory array and/or has a substantially rectangular shape.

9. An OTP memory as recited in claim 1, wherein the interconnect has a body, and wherein the width of the body of the interconnect is substantially close to the minimum feature width of the interconnect.

10. An OTP memory as recited in claim 1, wherein the diode operates as program selector, and the diode has no more than two contacts in at least one of the terminals.

11. An OTP memory as recited in claim 1, wherein at least one of the interconnect or diode contacts has size larger than a least one contact outside of the OTP memory array.

12. An OTP memory as recited in claim 1, wherein at least one shallow trench isolation is used to isolate the first and second terminals of the diode, and/or between OTP cells.

13. An OTP memory as recited in claim 1, wherein at least one dummy CMOS gate is used to isolate the first and second terminals of the diode, and/or between OTP cells.

14. An OTP memory as recited in claim 13, wherein the width of the dummy CMOS gate is substantially close to the minimum CMOS gate width.

15. An OTP memory as recited in claim 1, wherein at least one silicide block layers are used to isolate the first and second terminals of the diode, and/or between OTP cells.

16. An OTP memory as recited in claim 1, wherein the interconnect is built on the same structure of isolated active region as the diode.

17. An OTP memory as recited in claim 1, wherein the OTP element is coupled to the diode through a local interconnect, and the diode operates as a program selector.

18. An OTP memory as recited in claim 1, wherein the program voltage of the OTP cell is substantially close to the I/O voltages and/or shares the same pin with at least one of the I/O supply voltage pin.

19. An electronics system, comprising:

a processor; and

an One-Time Programmable (OTP) memory operatively connected to the processor, the OTP memory including a plurality of OTP cells, at least one of the cells comprising;

an OTP element including at least an interconnect coupled to a first supply voltage line;

a diode including at least a first active region and a second active region isolated from the first active region, where the first active region having a first type of dopant and the second region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, both the first and second active regions residing in a common CMOS well or on an isolated substrate, the first active region coupled to the OTP element, and the second active region coupled to a second supply voltage line,

wherein the first and second active regions being fabricated from sources or drains of CMOS devices, and

wherein the OTP element is configured to be programmable by applying voltages to the first and the second supply voltage lines to thereby change the resistance into a different logic state.

20. An electronics system as recited in claim 19, wherein the interconnect is constructed from a CMOS gate.

21. An electronics system as recited in claim 19, wherein the interconnect has at least one of polysilicon, silicided polysilicon, silicide, local interconnect, thermally isolated active region, metal, metal alloy, or combination thereof.

22. A method for operating an OTP memory comprises:

providing a plurality of OTP cells, at least one of the OTP cells includes at least (i) an OTP element including at least one interconnect coupled to a first supply voltage line; and

(ii) a diode including at least a first active region and a second active region isolated from the first active region, where the first active region having a first type of dopant and the second region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, both the first and second active regions being fabricated from sources or drains of CMOS devices and residing in a common CMOS well or on an isolated substrate, the first active region coupled to the OTP element, and the second active region coupled to a second supply voltage line; and

one-time programming a logic state into at least one of the OTP cells by applying voltages to the first and the second voltage lines

23. A method as recited in claim 22, wherein the interconnect is constructed from at least a portion of polysilicon, silicided polysilicon, silicide, local interconnect, thermally isolated active region, metal, metal alloy, CMOS gate, or combination thereof.

24. A method as recited in claim 22, wherein the interconnect is built on the same structure of an isolated active region as the diode operated as program selector.