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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

  • US 20120225543A1
  • Filed: 02/23/2012
  • Published: 09/06/2012
  • Est. Priority Date: 03/04/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode over a substrate having an insulating surface;

    forming an insulating layer from which oxygen is released by heating, over the gate electrode;

    forming an oxide semiconductor layer in contact with the insulating layer; and

    performing a light irradiation treatment on at least the gate electrode, whereby the oxygen is added from the insulating layer into the oxide semiconductor layer.

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